DIODES DMC2710UVQ-13
| Manufacturer | |
| MPN | DMC2710UVQ-13 |
| LCSC Part # | C19949264 |
| Packaging | SOT-563 |
| Customer # | |
| Key Attributes | 1.1A 400mΩ@4.5V 800mW 1V SOT-563 FET, MOSFET Arrays RoHS |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | SOT-563 | |
| Current - Continuous Drain(Id) | 1.1A | |
| RDS(on) | 400mΩ@4.5V | |
| Pd - Power Dissipation | 800mW | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Drain to Source Voltage | 20V | |
| Type | N-Channel + P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 6.5pF | |
| Input Capacitance(Ciss) | 49pF | |
| Gate Charge(Qg) | 700pC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 13pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | SOT-563 | |
| Current - Continuous Drain(Id) | 1.1A | |
| RDS(on) | 400mΩ@4.5V | |
| Pd - Power Dissipation | 800mW | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Type | Description | |
|---|---|---|
| Drain to Source Voltage | 20V | |
| Type | N-Channel + P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 6.5pF | |
| Input Capacitance(Ciss) | 49pF | |
| Gate Charge(Qg) | 700pC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 13pF |
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Introduction
AI Translation
This next-generation MOSFET is designed to minimize on-resistance (RDS(ON)) while maintaining superior switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Low on-resistance
- Low gate threshold voltage
- N-channel: VGS(TH) < 1 V
- P-channel: VGS(TH) < -1 V
- Low input capacitance
- Fast switching speed
- Low input/output leakage current
- Complementary pair MOSFET
- Ultra-compact surface mount package
- ESD protection on gate
- Fully lead-free and RoHS compliant
- Halogen- and antimony-free, "green" device
- Suitable for automotive applications requiring specific change control; AEC-Q101 qualified, PPAP capable, manufactured in IATF 16949 certified facility
Applications
AI Translation
- Battery-powered systems and solid-state relay drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc.
- Power conversion circuits
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.1415 | $ 0.14 |
| 200+ | $ 0.0565 | $ 11.30 |
| 500+ | $ 0.0546 | $ 27.30 |
| 1,000+ | $ 0.0537 | $ 53.70 |
Standard Packaging10000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | SOT-563 | |
| Current - Continuous Drain(Id) | 1.1A | |
| RDS(on) | 400mΩ@4.5V | |
| Pd - Power Dissipation | 800mW | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Drain to Source Voltage | 20V | |
| Type | N-Channel + P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 6.5pF | |
| Input Capacitance(Ciss) | 49pF | |
| Gate Charge(Qg) | 700pC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 13pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | SOT-563 | |
| Current - Continuous Drain(Id) | 1.1A | |
| RDS(on) | 400mΩ@4.5V | |
| Pd - Power Dissipation | 800mW | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Type | Description | |
|---|---|---|
| Drain to Source Voltage | 20V | |
| Type | N-Channel + P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 6.5pF | |
| Input Capacitance(Ciss) | 49pF | |
| Gate Charge(Qg) | 700pC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 13pF |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This next-generation MOSFET is designed to minimize on-resistance (RDS(ON)) while maintaining superior switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Low on-resistance
- Low gate threshold voltage
- N-channel: VGS(TH) < 1 V
- P-channel: VGS(TH) < -1 V
- Low input capacitance
- Fast switching speed
- Low input/output leakage current
- Complementary pair MOSFET
- Ultra-compact surface mount package
- ESD protection on gate
- Fully lead-free and RoHS compliant
- Halogen- and antimony-free, "green" device
- Suitable for automotive applications requiring specific change control; AEC-Q101 qualified, PPAP capable, manufactured in IATF 16949 certified facility
Applications
AI Translation
- Battery-powered systems and solid-state relay drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc.
- Power conversion circuits
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

