DIODES DMC10H172SSD-13
| Manufacturer | |
| MPN | DMC10H172SSD-13 |
| LCSC Part # | C19949262 |
| Packaging | SO-8 |
| Customer # | |
| Key Attributes | 2A 200mΩ@4.5V 1.5W 3V SO-8 FET, MOSFET Arrays RoHS |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | SO-8 | |
| Current - Continuous Drain(Id) | 2A | |
| RDS(on) | 200mΩ@4.5V | |
| Pd - Power Dissipation | 1.5W | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Drain to Source Voltage | 100V | |
| Type | N-Channel + P-Channel | |
| Gate Charge(Qg) | 19.6nC@10V | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | SO-8 | |
| Current - Continuous Drain(Id) | 2A | |
| RDS(on) | 200mΩ@4.5V | |
| Pd - Power Dissipation | 1.5W |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Drain to Source Voltage | 100V | |
| Type | N-Channel + P-Channel | |
| Gate Charge(Qg) | 19.6nC@10V | |
| Operating Temperature | -55℃~+150℃ |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This next-generation MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining superior switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- 100% UIS tested in production
- Low input capacitance
- Low on-resistance
- Fast switching speed
- Fully lead-free and RoHS compliant
- Halogen and antimony free. "Green" device
Applications
AI Translation
- DC-DC Converter - Power Management - Backlight Source
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.6969 | $ 0.70 |
| 200+ | $ 0.2778 | $ 55.56 |
| 500+ | $ 0.2699 | $ 134.95 |
| 1,000+ | $ 0.2651 | $ 265.10 |
Standard Packaging2500/Full Bag | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | SO-8 | |
| Current - Continuous Drain(Id) | 2A | |
| RDS(on) | 200mΩ@4.5V | |
| Pd - Power Dissipation | 1.5W | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Drain to Source Voltage | 100V | |
| Type | N-Channel + P-Channel | |
| Gate Charge(Qg) | 19.6nC@10V | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | SO-8 | |
| Current - Continuous Drain(Id) | 2A | |
| RDS(on) | 200mΩ@4.5V | |
| Pd - Power Dissipation | 1.5W |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Drain to Source Voltage | 100V | |
| Type | N-Channel + P-Channel | |
| Gate Charge(Qg) | 19.6nC@10V | |
| Operating Temperature | -55℃~+150℃ |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This next-generation MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining superior switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- 100% UIS tested in production
- Low input capacitance
- Low on-resistance
- Fast switching speed
- Fully lead-free and RoHS compliant
- Halogen and antimony free. "Green" device
Applications
AI Translation
- DC-DC Converter - Power Management - Backlight Source
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

