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Taiwan Semiconductor TSM250N02DCQ product image
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Taiwan Semiconductor TSM250N02DCQRoHS

Manufacturer
Taiwan SemiconductorAsian Brands
MPN
TSM250N02DCQ
LCSC Part #
C19856086
Packaging
TDFN-6(2x2)
Customer #
Key Attributes
5.8A 55mΩ@1.8V 620mW 800mV TDFN-6(2x2) FET, MOSFET Arrays RoHS
Datasheetpdf iconTaiwan Semiconductor TSM250N02DCQ
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.9736$ 0.97
200+$ 0.3895$ 77.90
500+$ 0.3758$ 187.90
1,000+$ 0.3697$ 369.70
Standard Packaging12000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerTaiwan Semiconductor
PackagingTDFN-6(2x2)
Current - Continuous Drain(Id)5.8A
RDS(on)55mΩ@1.8V
Pd - Power Dissipation620mW
Gate Threshold Voltage (Vgs(th))800mV
Drain to Source Voltage20V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)50pF
Input Capacitance(Ciss)775pF
Gate Charge(Qg)7.7nC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)85pF
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Introduction

AI Translation

This 2.5V specified P-channel MOSFET utilizes advanced PowerTrench technology with a robust gate structure. It is optimized for power management applications with wide-range gate drive voltages (2.5V - 12V). These devices are designed to achieve excellent power dissipation in an extremely small footprint, suited for applications where the use of larger and more expensive SO-8 and TSSOP-8 packages is impractical.

Features

AI Translation
  • Halogen-Free according to IEC 61249-2-21
  • Suited for 1.8V drive applications
  • Low profile package
  • RoHS Compliant

Applications

AI Translation
  • Battery Pack Load Switch