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SEMTECH RCLAMP2451ZATFTRoHS

Manufacturer
MPN
RCLAMP2451ZATFT
LCSC Part #
C1975086
Packaging
0201
Customer #
Key Attributes
TVS DIODE 24VWM 8VC 0201
Datasheetpdf iconSEMTECH RCLAMP2451ZATFT
In-Stock: 12,680
12,680 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1784$ 0.89
50+$ 0.1416$ 7.08
150+$ 0.1258$ 18.87
500+$ 0.1062$ 53.10
2,500+$ 0.0974$ 243.50
5,000+$ 0.0921$ 460.50
Standard Packaging15000/Full Reel
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Products Specifications

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TypeDescription
CategoryCircuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes
ManufacturerSEMTECH
Packaging0201
Clamping Voltage8V
Peak Pulse Current (Ipp)4A@8/20us
Peak Pulse Power Dissipation (Ppp)32W@8/20us
Number of Channels1
Voltage - Breakdown31V
typeTVS
Reverse Leakage Current (Ir)50nA
PolarityBidirectional
Reverse Stand-Off Voltage (Vrwm)24V

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging15000
Sales UnitPiece

Introduction

AI Translation

RailClamp TVS diodes are ultra low capacitance devices designed to protect sensitive electronics from damage or latch-up due to ESD, EFT, and EOS. They are designed for use on high speed ports in applications such as cell phones, notebook computers, and other portable electronics. These devices offer desirable characteristics for board level protection including fast response time, low operating and clamping voltage, and no device degradation. RClamp2451ZA is specifically designed for protection of Near Field Communications (NFC) interfaces. It features extremely good ESD protection characteristics including a low typical dynamic resistance of 0.16 Ohms (typical), low peak ESD clamping voltage, and high ESD withstand voltage (+/-14k) contact per IEC 61000 - 4 - 2). Low typical capacitance (0.35pF at VR = 0V.) means that RClamp2451ZA will not create harmonic distortion in the RF signal. This device is bidirectional and has a working voltage of 24V for use on NFC resonator circuits without signal clipping. RClamp2451ZA is in a 2 - pin SLP0603P2X3F package measuring 0.6×0.3 mm with a nominal height of 0.25 mm. Leads are finished with lead - free NiAu. The combination of working voltage, low dynamic resistance, and low capacitance makes this device ideal for use on NFC antenna circuits, RF signal lines, and FM antennas in portable devices.

Features

AI Translation
  • High ESD withstand voltage: +/-14kV (contact) and +/-18kV (air) per IEC 61000 - 4 - 2
  • Able to withstand over 1000 ESD strikes per IEC 61000 - 4 - 2 Level 4
  • Ultra - small 0201 package
  • Protects one high speed data line
  • Low ESD clamping voltage
  • Working voltage: +/-24V
  • Low capacitance: 0.35pF Typical
  • Low leakage current
  • Low dynamic resistance: 0.16 Ohms Typical
  • Solid - state silicon - avalanche technology

Applications

AI Translation
  • Near Field Communication (NFC) lines
  • RF signal lines
  • FM Antenna