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ElecSuper IRLML0030TRPBF-ES product image
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ElecSuper IRLML0030TRPBF-ESRoHS

Manufacturer
ElecSuperAsian Brands
MPN
IRLML0030TRPBF-ES
LCSC Part #
C19725094
Packaging
SOT-23
Customer #
Key Attributes
MOSFET N-CH 30V 5.8A SOT-23
Datasheetpdf iconElecSuper IRLML0030TRPBF-ES
In-Stock: 7,660
7,660 In stock, ships now
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QtyUnit PriceTotal Amount
20+$ 0.0322$ 0.64
200+$ 0.0252$ 5.04
600+$ 0.0213$ 12.78
3,000+$ 0.018$ 54.00
9,000+$ 0.0159$ 143.10
21,000+$ 0.0149$ 312.90
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-23
Drain to Source Voltage30V
Output Capacitance(Coss)62pF
Current - Continuous Drain(Id)5.8A
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.4W
Reverse Transfer Capacitance (Crss@Vds)48pF
RDS(on)21mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)550pF
Gate Charge(Qg)6.7nC@4.5V
TypeN-Channel
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Additional Information

TypeDetails
Minimum20
Multiple20
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

IRLML0030TRPBF-ES is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) with low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product IRLML0030TRPBF-ES is lead-free.

Features

AI Translation
  • 30V, RDS(ON) = 21 mΩ (typical) at VGS = 10 V
  • RDS(ON) = 25 mΩ (typical) at VGS = 4.5 V
  • Trench MOSFET technology
  • High-density cell design for low RDS(on)
  • Halogen-free material
  • Robust and reliable
  • Avalanche rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop PCs
  • DC/DC conversion