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ElecSuper TPH1R403NL-ES product image
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ElecSuper TPH1R403NL-ESRoHS

Manufacturer
ElecSuperAsian Brands
MPN
TPH1R403NL-ES
LCSC Part #
C19725091
Packaging
PDFN5x6-8L
Customer #
Key Attributes
MOSFET N-CH 30V 120A PDFN5x6-8L
Datasheetpdf iconElecSuper TPH1R403NL-ES
In-Stock: 4,135
4,135 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.372$ 1.86
50+$ 0.2859$ 14.30
150+$ 0.2491$ 37.37
500+$ 0.2029$ 101.45
2,500+$ 0.183$ 457.50
5,000+$ 0.1707$ 853.50
Standard Packaging5000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingPDFN5x6-8L
Drain to Source Voltage30V
Output Capacitance(Coss)1.71nF
Current - Continuous Drain(Id)120A
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation120W
Reverse Transfer Capacitance (Crss@Vds)140pF
RDS(on)1.15mΩ@10V;1.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)4.05nF
Gate Charge(Qg)68nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

TPH1R403NL-ES is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it achieves excellent RDS(ON) with low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product TPH1R403NL-ES is lead-free.

Features

AI Translation
  • 30 V, RDS(ON) = 1.15 mΩ (typical), VGS = 10 V
  • RDS(ON) = 1.5 mΩ (typical), VGS = 4.5 V
  • Trench MOSFET technology
  • High-density cell design for low RDS(ON)
  • Halogen-free material
  • Robust and reliable
  • Avalanche-rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop computers
  • DC/DC conversion