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VBsemi Elec FQD2N50TF-VBRoHS

Manufacturer
VBsemi ElecAsian Brands
MPN
FQD2N50TF-VB
LCSC Part #
C19711318
Packaging
TO-252
Customer #
Key Attributes
N-Channel 650 V (D-S) MOSFET
Datasheetpdf iconVBsemi Elec FQD2N50TF-VB
In-Stock: 45
45 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.551$ 0.4684$ 0.47
10+$ 0.4383$ 0.3726$ 3.73
30+$ 0.389$ 0.3307$ 9.92
100+$ 0.3287$ 0.2794$ 27.94
500+$ 0.3017$ 0.2565$ 128.25
1,000+$ 0.2858$ 0.2430$ 243.00
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVBsemi Elec
PackagingTO-252
Drain to Source Voltage650V
Output Capacitance(Coss)40pF
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)3.8Ω@10V
Number1 N-channel
Input Capacitance(Ciss)330pF
Gate Charge(Qg)15nC
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Features

AI Translation
  • Low Gate Charge Qg Results in Simple Drive Requirement
  • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
  • Fully Characterized Capacitance and Avalanche Voltage and Current
  • Compliant to RoHS directive 2002/95/EC