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VBsemi Elec IXTP3N50D2-VBRoHS

Manufacturer
VBsemi ElecAsian Brands
MPN
IXTP3N50D2-VB
LCSC Part #
C19632135
Packaging
TO-220AB
Customer #
Key Attributes
MOSFET N-CH 600V 8A TO-220AB
Datasheetpdf iconVBsemi Elec IXTP3N50D2-VB
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.4195$ 0.42
10+$ 0.4089$ 4.09
50+$ 0.4029$ 20.15
100+$ 0.3968$ 39.68
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVBsemi Elec
PackagingTO-220AB
Configuration-
Drain to Source Voltage600V
Output Capacitance(Coss)180pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation170W
Reverse Transfer Capacitance (Crss@Vds)7.1pF
RDS(on)780mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.4nF
Gate Charge(Qg)49nC
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Features

AI Translation
  • Low gate charge Qg results in simple drive requirement
  • Improved gate, avalanche and dynamic dV/dt RoHS ruggedness
  • Fully characterized capacitance and avalanche voltage and current

Applications

AI Translation
  • Switch mode power supply (SMPS)
  • Uninterruptible power supply
  • High speed power switching