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VBsemi Elec FQD12N20TM-VB product image
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VBsemi Elec FQD12N20TM-VBRoHS

Manufacturer
VBsemi ElecAsian Brands
MPN
FQD12N20TM-VB
LCSC Part #
C19632057
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 200V 10A TO-252
Datasheetpdf iconVBsemi Elec FQD12N20TM-VB
In-Stock: 69
69 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.6732$ 0.6396$ 0.64
10+$ 0.5415$ 0.5145$ 5.15
30+$ 0.4764$ 0.4526$ 13.58
100+$ 0.4113$ 0.3908$ 39.08
500+$ 0.3732$ 0.3546$ 177.30
1,000+$ 0.3525$ 0.3349$ 334.90
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVBsemi Elec
PackagingTO-252
Drain to Source Voltage200V
Output Capacitance(Coss)180pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation96W
Reverse Transfer Capacitance (Crss@Vds)80pF
RDS(on)245mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.8nF
Gate Charge(Qg)34nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Features

AI Translation
  • Trench power MOSFET
  • Junction temperature 175 °C
  • PWM optimized
  • 100% Rg tested
  • RoHS compliant with directive 2002/95/EC

Applications

AI Translation
  • Primary-side switch