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SINO-IC SE30150GRoHS

Manufacturer
SINO-ICAsian Brands
MPN
SE30150G
LCSC Part #
C19631229
Packaging
DFN5X6-8L
Customer #
Key Attributes
N-Channel Enhancement Mode MOSFET
Datasheetpdf iconSINO-IC SE30150G
In-Stock: 730
730 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.4862$ 2.43
50+$ 0.4051$ 20.26
150+$ 0.3704$ 55.56
500+$ 0.327$ 163.50
2,500+$ 0.3077$ 769.25
5,000+$ 0.2961$ 1480.50
Standard Packaging5000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerSINO-IC
PackagingDFN5X6-8L
Drain to Source Voltage30V
Output Capacitance(Coss)340pF
Current - Continuous Drain(Id)150A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation187W
RDS(on)2.5mΩ@45V
Reverse Transfer Capacitance (Crss@Vds)225pF
Number1 N-channel
Input Capacitance(Ciss)4.345nF
Gate Charge(Qg)56.9nC@10V
TypeN-Channel
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Introduction

AI Translation

The SE30150G uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a

Features

AI Translation
  • RDS(ON) < 2.4mΩ @ VGS = 10V

Applications

AI Translation
  • Battery protection
  • Load switch
  • Uninterruptible power supply
  • DFN5X6-8L