Tokmas AON6250(TOKMS)
| Manufacturer | TokmasAsian Brands |
| MPN | AON6250(TOKMS) |
| LCSC Part # | C19626240 |
| Packaging | DFN-8(5x6) |
| Customer # | |
| Key Attributes | MOSFET N-CH 150V 50A DFN-8(5x6) |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Tokmas | |
| Packaging | DFN-8(5x6) | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 50A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 110W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 18mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 42nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Tokmas | |
| Packaging | DFN-8(5x6) | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 50A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 110W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 18mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 42nC@10V | |
| Type | N-Channel |
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Introduction
AI Translation
This N-Channel MOSFET uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
AI Translation
- VDS=150V, ID=50A, RDS(ON)<18mΩ@VGS=10V
- Low gate charge.
- Green device available.
- Advanced high cell denity trench technology for ultra Iow RDS(ON).
- Excellent package for good heat dissipation.
In-Stock: 1,834
1,834 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.7012$ 0.6451 | $ 0.65 |
| 10+ | $ 0.5691$ 0.5236 | $ 5.24 |
| 30+ | $ 0.5022$ 0.4621 | $ 13.86 |
| 100+ | $ 0.4354$ 0.4006 | $ 40.06 |
| 500+ | $ 0.3767$ 0.3466 | $ 173.30 |
| 1,000+ | $ 0.3571$ 0.3286 | $ 328.60 |
Standard Packaging5000/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Tokmas | |
| Packaging | DFN-8(5x6) | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 50A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 110W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 18mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 42nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Tokmas | |
| Packaging | DFN-8(5x6) | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 50A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 110W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 18mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 42nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This N-Channel MOSFET uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
AI Translation
- VDS=150V, ID=50A, RDS(ON)<18mΩ@VGS=10V
- Low gate charge.
- Green device available.
- Advanced high cell denity trench technology for ultra Iow RDS(ON).
- Excellent package for good heat dissipation.
C19626240 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



