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Tokmas BSC093N15NS5(TOKMAS)RoHS

Manufacturer
TokmasAsian Brands
MPN
BSC093N15NS5(TOKMAS)
LCSC Part #
C19626235
Packaging
DFN-8(5x6)
Customer #
Key Attributes
MOSFET N-CH 150V 80A DFN-8(5x6)
Datasheetpdf iconTokmas BSC093N15NS5(TOKMAS)
In-Stock: 120
120 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.0648$ 1.06
10+$ 0.8711$ 8.71
30+$ 0.7653$ 22.96
100+$ 0.6692$ 66.92
500+$ 0.6155$ 307.75
1,000+$ 0.5911$ 591.10
Standard Packaging5000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerTokmas
PackagingDFN-8(5x6)
Drain to Source Voltage150V
Output Capacitance(Coss)1.673nF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation160W
Reverse Transfer Capacitance (Crss@Vds)174pF
RDS(on)10mΩ
Number1 N-channel
Input Capacitance(Ciss)5.131nF
Gate Charge(Qg)69nC@10V
TypeN-Channel

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

This N-Channel MOSFET uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

Features

AI Translation
  • VDS=150V, ID=80A, RDS(ON)<10mΩ@VGS=10V
  • Low gate charge.
  • Green device available.
  • Advanced high cell denity trench technology for ultra Iow RDS(ON).
  • Excellent package for good heat dissipation.