Tokmas BSC093N15NS5(TOKMAS)
| Manufacturer | TokmasAsian Brands |
| MPN | BSC093N15NS5(TOKMAS) |
| LCSC Part # | C19626235 |
| Packaging | DFN-8(5x6) |
| Customer # | |
| Key Attributes | MOSFET N-CH 150V 80A DFN-8(5x6) |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Tokmas | |
| Packaging | DFN-8(5x6) | |
| Drain to Source Voltage | 150V | |
| Output Capacitance(Coss) | 1.673nF | |
| Current - Continuous Drain(Id) | 80A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 160W | |
| Reverse Transfer Capacitance (Crss@Vds) | 174pF | |
| RDS(on) | 10mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.131nF | |
| Gate Charge(Qg) | 69nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-Channel MOSFET uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
AI Translation
- VDS=150V, ID=80A, RDS(ON)<10mΩ@VGS=10V
- Low gate charge.
- Green device available.
- Advanced high cell denity trench technology for ultra Iow RDS(ON).
- Excellent package for good heat dissipation.
In-Stock: 120
120 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.0648 | $ 1.06 |
| 10+ | $ 0.8711 | $ 8.71 |
| 30+ | $ 0.7653 | $ 22.96 |
| 100+ | $ 0.6692 | $ 66.92 |
| 500+ | $ 0.6155 | $ 307.75 |
| 1,000+ | $ 0.5911 | $ 591.10 |
Standard Packaging5000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Tokmas | |
| Packaging | DFN-8(5x6) | |
| Drain to Source Voltage | 150V | |
| Output Capacitance(Coss) | 1.673nF | |
| Current - Continuous Drain(Id) | 80A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 160W | |
| Reverse Transfer Capacitance (Crss@Vds) | 174pF | |
| RDS(on) | 10mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.131nF | |
| Gate Charge(Qg) | 69nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-Channel MOSFET uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
AI Translation
- VDS=150V, ID=80A, RDS(ON)<10mΩ@VGS=10V
- Low gate charge.
- Green device available.
- Advanced high cell denity trench technology for ultra Iow RDS(ON).
- Excellent package for good heat dissipation.
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



