TI LF356N/NOPB

These are the first monolithic JFET input operational amplifiers to incorporate well matched, high voltage JFETs on the same chip with standard bipolar transistors (BI-FET Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust which does not degrade drift or common - mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.

• Replace expensive hybrid and module FET op amps
• Rugged JFETs allow blow - out free handling compared with MOSFET input devices
• Excellent for low noise applications using either high or low source impedance—very low 1/f corner
• Offset adjust does not degrade drift or common - mode rejection as in most monolithic amplifiers
• New output stage allows use of large capacitive loads (5,000 pF) without stability problems
• Internal compensation and large differential input voltage capability
• Low input bias current: 30pA
• Low Input Offset Current: 3pA
• High input impedance: 10^12 Ω
• Low input noise current: 0.01 pA/√Hz
• High common - mode rejection ratio: 100 dB
• Large dc voltage gain: 106 dB

• Precision high speed integrators
• Fast D/A and A/D converters
• High impedance buffers
• Wideband, low noise, low drift amplifiers
• Logarithmic amplifiers
• Photocell amplifiers
• Sample and Hold circuits