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onsemi NDT2955RoHS

Manufacturer
onsemi
MPN
NDT2955
LCSC Part #
C194179
Packaging
SOT-223
Customer #
Key Attributes
MOSFET P-CH 60V 2.5A SOT-223
Datasheetpdf icononsemi NDT2955
In-Stock: 1,455
1,455 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.409$ 2.05
50+$ 0.3051$ 15.26
150+$ 0.2606$ 39.09
500+$ 0.205$ 102.50
2,500+$ 0.1802$ 450.50
4,000+$ 0.1654$ 661.60
Standard Packaging4000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingSOT-223
Drain to Source Voltage60V
Current - Continuous Drain(Id)2.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.6V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)35pF
RDS(on)500mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)601pF
Gate Charge(Qg)15nC@10V
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging4000
Sales UnitPiece

Introduction

AI Translation

This 60V P-Channel MOSFET is produced using Fairchild Semiconductor’s high voltage Trench process. It has been optimized for power management applications.

Features

AI Translation
  • High density cell design for extremely low RDS(ON)
  • High power and current handling capability in a widely used surface mount package

Applications

AI Translation
  • DC/DC converter Power management