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GigaDevice Semicon Beijing GD32F205RCT6 product image
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GigaDevice Semicon Beijing GD32F205RCT6RoHS

Manufacturer
GigaDevice Semicon BeijingAsian Brands
MPN
GD32F205RCT6
LCSC Part #
C194050
Packaging
LQFP-64(10x10)
Customer #
Key Attributes
SPI NOR FLASH, SPI NAND FLASH, MCU
Datasheetpdf iconGigaDevice Semicon Beijing GD32F205RCT6
In-Stock: 970
970 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 6.4964$ 6.50
10+$ 5.1236$ 51.24
Standard Packaging160/Full Tray
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Embedded/Microcontrollers
ManufacturerGigaDevice Semicon Beijing
PackagingLQFP-64(10x10)
DAC (Bit)12bit
ADC (Bit)12bit
Voltage - Supply2.6V~3.6V
Program Memory TypeFLASH
Program Storage Size256KB
CPU CoreARM Cortex-M3
CPU Maximum Speed120MHz
Number of I/O51
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging160
Sales UnitPiece

Features

AI Translation
  • Single Power Supply Voltage - Voltage range: 2.7V~3.6V
  • High Speed Clock Frequency - Maximum 120MHz for fast read with 30pF load - Dual I/O Data transfer up to 240Mbits/s - Quad I/O Data transfer up to 480Mbits/s - Continuous Read With 8/16/32/64-Byte Wrap
  • Flexible Memory Architecture - Sector Size: 4K Bytes - Block Size: 32/64K Bytes
  • Single Power Supply Voltage - Voltage range: 2.3V~3.6V
  • High Speed Clock Frequency - Maximum 104MHz for fast read with 30pF load - Dual I/O Data transfer up to 208Mbits/s - Quad I/O Data transfer up to 416Mbits/s - Continuous Read With 8/16/32/64-Byte Wrap
  • Flexible Memory Architecture - Sector Size: 4K Bytes - Block Size: 32/64K Bytes
  • Single Power Supply Voltage - Voltage range: 1.65V~2.0V
  • 120MHz for fast read with 30pF load - Dual I/O Data transfer up to 240Mbits/s - Quad I/O Data transfer up to 480Mbits/s - QPI Data transfer up to 480Mbits/s - Continuous Read With 8/16/32/64-Byte Wrap
  • Flexible Memory Architecture - Sector Size: 4K Bytes - Block Size: 32/64K Bytes
  • Power Supply Voltage: 2.7V~3.6V
  • High Speed Clock Frequency - 120MHz for fast read with 30pF load - Quad I/O Data transfer up to 480Mbits/s
  • Flexible Memory Architecture 1Gbit & 2Gbit: - 2048-Byte page for read and program, spare area 128-Byte - (128K + 8K)-Byte per block for erase 4Gbit & 8Gbit: - 4096-Byte page for read and program, spare area 256-Byte - (256K + 16K)-Byte per block for erase
  • Enhanced Access Performance - 2K-Byte cache for fast random read for 1G & 2G - 4K-Byte cache for fast random read for 4G & 8G - Cache read and cache program
  • Advanced Feature for NAND - Internal ECC option - Internal data move by page with ECC - Promised good block0 with ECC
  • Power Supply Voltage: 1.7V~2.0V
  • High Speed Clock Frequency - 120MHz for fast read with 30pF load - Quad I/O Data transfer up to 480Mbits/s
  • Flexible Memory Architecture 1Gbit & 2Gbit: - 2048-Byte page for read and program, spare area 128-Byte - (128K + 8K)-Byte per block for erase 4Gbit & 8Gbit: - 4096-Byte page for read and program, spare area 256-Byte - (256K + 16K)-Byte per block for erase
  • Enhanced Access Performance - 2K-Byte cache for fast random read for 1G & 2G - 4K-Byte cache for fast random read for 4G & 8G - Cache read and cache program
  • Advanced Feature for NAND - Internal ECC option - Internal data move by page with ECC - Promised good block0 with ECC

Applications

AI Translation
  • Embedded applications
  • Consumer applications
  • Mobile communication applications