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Minos IRF640NSRoHS

Manufacturer
MinosAsian Brands
MPN
IRF640NS
LCSC Part #
C19272231
Packaging
TO-263
Customer #
Key Attributes
MOSFET N-CH 200V 18A TO-263
Datasheetpdf iconMinos IRF640NS
In-Stock: 2,185
2,185 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.5499$ 0.55
10+$ 0.4315$ 4.32
30+$ 0.3812$ 11.44
100+$ 0.318$ 31.80
500+$ 0.2677$ 133.85
800+$ 0.2499$ 199.92
Standard Packaging800/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMinos
PackagingTO-263
Drain to Source Voltage200V
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation130W
Reverse Transfer Capacitance (Crss@Vds)130pF
RDS(on)130mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.32nF
Gate Charge(Qg)23nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging800
Sales UnitPiece

Introduction

AI Translation

IRF640NS, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications.

Features

AI Translation
  • VDS = 200 V, ID = 18A
  • RDS(ON) < 180mΩ @ VGS = 10V
  • Fast Switching
  • Low Crss
  • 100% avalanche tested
  • Improved dv/dt capability
  • RoHS product

Applications

AI Translation
  • High frequency switching mode power supply