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JSMSEMI FDB33N25TM-JSMRoHS

Manufacturer
JSMSEMIAsian Brands
MPN
FDB33N25TM-JSM
LCSC Part #
C19269240
Packaging
TO-263-2L
Customer #
Key Attributes
MOSFET N-CH 250V 35A TO-263-2L
Datasheetpdf iconJSMSEMI FDB33N25TM-JSM
In-Stock: 200
200 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.394$ 1.1152$ 1.12
10+$ 1.1654$ 0.9324$ 9.32
30+$ 1.04$ 0.8320$ 24.96
100+$ 0.8971$ 0.7177$ 71.77
500+$ 0.8336$ 0.6669$ 333.45
800+$ 0.805$ 0.6440$ 515.20
Standard Packaging800/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerJSMSEMI
PackagingTO-263-2L
Drain to Source Voltage250V
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation250W
RDS(on)50mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)101pF
Number1 N-channel
Input Capacitance(Ciss)2.8nF
Gate Charge(Qg)154nC@160V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging800
Sales UnitPiece

Introduction

AI Translation

CJQ10SN15S utilizes shielded gate trench technology and a low-resistance package to achieve ultra-low RDS(ON). The device is ideally suited for load switch and battery protection applications.

Features

AI Translation
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

Applications

AI Translation
  • DC-DC Converters
  • DC-AC Inverters for UPS
  • SMPS
  • Motor controls