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ST STPSC8065D
| Manufacturer | |
| MPN | STPSC8065D |
| LCSC Part # | C192070 |
| Packaging | TO-220AC |
| Customer # | |
| Key Attributes | DIODE SIC 650V 8A TO-220AC |
| Datasheet |  ST STPSC8065D |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | ST | |
| Packaging | TO-220AC | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -40℃~+175℃ | |
| Voltage - DC Reverse (Vr) (Max) | 650V | |
| Voltage - Forward(Vf@If) | 1.45V@8A | |
| Reverse Leakage Current (Ir) | 105uA@650V | |
| Non-Repetitive Peak Forward Surge Current | 200A | |
| Current - Rectified | 8A |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn - off and ringing patterns are negligible. The minimal capacitive turn - off behavior is independent of temperature. Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.
Features
- AEC - Q101 qualified
- No or negligible reverse recovery
- Switching behavior independent of temperature
- Dedicated to PFC applications
- High forward surge capability
- PPAP capable
- Operating Tj from - 40 °C to 175 °C
- ECOPACK 02 compliant component
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 3.0052 | $ 3.01 |
| 10+ | $ 2.5216 | $ 25.22 |
| 50+ | $ 2.2182 | $ 110.91 |
| 100+ | $ 1.9066 | $ 190.66 |
| 500+ | $ 1.7671 | $ 883.55 |
| 1,000+ | $ 1.7054 | $ 1705.40 |
Standard Packaging50/Full Tube | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | ST | |
| Packaging | TO-220AC | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -40℃~+175℃ | |
| Voltage - DC Reverse (Vr) (Max) | 650V | |
| Voltage - Forward(Vf@If) | 1.45V@8A | |
| Reverse Leakage Current (Ir) | 105uA@650V | |
| Non-Repetitive Peak Forward Surge Current | 200A | |
| Current - Rectified | 8A |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn - off and ringing patterns are negligible. The minimal capacitive turn - off behavior is independent of temperature. Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.
Features
- AEC - Q101 qualified
- No or negligible reverse recovery
- Switching behavior independent of temperature
- Dedicated to PFC applications
- High forward surge capability
- PPAP capable
- Operating Tj from - 40 °C to 175 °C
- ECOPACK 02 compliant component
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC |
| Type | Details |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |