VBsemi Elec STD3N62K3-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | STD3N62K3-VB |
| LCSC Part # | C19190245 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET N-CH 650V 4.5A TO-252 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-252 | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 177pF | |
| Current - Continuous Drain(Id) | 4.5A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | |
| RDS(on) | 2.1Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.417nF | |
| Gate Charge(Qg) | 48nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Low Gate Charge Qg Results in Simple Drive Requirement Available
- Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Compliant to RoHS directive 2002/95/EC
In-Stock: 50
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Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.5574$ 0.4738 | $ 0.47 |
| 10+ | $ 0.4434$ 0.3769 | $ 3.77 |
| 30+ | $ 0.3936$ 0.3346 | $ 10.04 |
| 100+ | $ 0.3325$ 0.2827 | $ 28.27 |
| 500+ | $ 0.3052$ 0.2595 | $ 129.75 |
| 1,000+ | $ 0.2892$ 0.2459 | $ 245.90 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-252 | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 177pF | |
| Current - Continuous Drain(Id) | 4.5A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | |
| RDS(on) | 2.1Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.417nF | |
| Gate Charge(Qg) | 48nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Low Gate Charge Qg Results in Simple Drive Requirement Available
- Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Compliant to RoHS directive 2002/95/EC
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



