VBsemi Elec FDPF15N65YDTU-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | FDPF15N65YDTU-VB |
| LCSC Part # | C19190143 |
| Packaging | TO-220F |
| Customer # | |
| Key Attributes | 650V 20A 5V 30W 170mΩ@10V 1 N-channel N-Channel TO-220F Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-220F | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 118pF | |
| Current - Continuous Drain(Id) | 20A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 30W | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| RDS(on) | 170mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.414nF | |
| Gate Charge(Qg) | 110nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Low figure of merit (FOM) Ron × Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra-low gate charge (Qg)
- Avalanche energy rated (UIS)
- RoHS compliant
Applications
AI Translation
- Primary-side switch - N-channel MOSFET
In-Stock: 38
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.896 | $ 1.90 |
| 10+ | $ 1.6474 | $ 16.47 |
| 50+ | $ 1.5126 | $ 75.63 |
| 100+ | $ 1.3582 | $ 135.82 |
| 500+ | $ 1.29 | $ 645.00 |
| 1,000+ | $ 1.2591 | $ 1259.10 |
Standard Packaging50/Full Tube | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-220F | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 118pF | |
| Current - Continuous Drain(Id) | 20A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 30W | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| RDS(on) | 170mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.414nF | |
| Gate Charge(Qg) | 110nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Low figure of merit (FOM) Ron × Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra-low gate charge (Qg)
- Avalanche energy rated (UIS)
- RoHS compliant
Applications
AI Translation
- Primary-side switch - N-channel MOSFET
C19190143 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



