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Minos IRFB3607RoHS

Manufacturer
MinosAsian Brands
MPN
IRFB3607
LCSC Part #
C19189960
Packaging
TO-220
Customer #
Key Attributes
MOSFET N-CH 80V 90A TO-220
Datasheetpdf iconMinos IRFB3607
In-Stock: 255
255 In stock, ships now
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QtyUnit PriceTotal Amount
5+$ 0.3247$ 0.3085$ 1.54
50+$ 0.255$ 0.2423$ 12.12
150+$ 0.2251$ 0.2139$ 32.09
500+$ 0.1878$ 0.1785$ 89.25
2,500+$ 0.1712$ 0.1627$ 406.75
5,000+$ 0.1612$ 0.1532$ 766.00
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMinos
PackagingTO-220
Drain to Source Voltage80V
Current - Continuous Drain(Id)90A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation147W
Reverse Transfer Capacitance (Crss@Vds)210pF
RDS(on)9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.95nF
Gate Charge(Qg)85nC@10V
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

The IRFB3607 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications.

Features

AI Translation
  • VDS = 80V, ID = 90A
  • RDS(ON) < 10mΩ @ VGS = 10V
  • Special process technology for high ESD capability
  • High density cell design for lower Rdson
  • Fully characterized avalanche voltage and current
  • Good stability and uniformity with high EAS
  • Excellent package for good heat dissipation

Applications

AI Translation
  • Power switching application
  • Hard switched and High frequency circuits
  • Uninterruptible power supply