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Minos IRFB4110RoHS

Manufacturer
MinosAsian Brands
MPN
IRFB4110
LCSC Part #
C19189954
Packaging
TO-220
Customer #
Key Attributes
MOSFET N-CH 100V 180A TO-220
Datasheetpdf iconMinos IRFB4110
In-Stock: 258
258 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.785$ 0.79
10+$ 0.635$ 6.35
50+$ 0.5489$ 27.45
100+$ 0.4739$ 47.39
500+$ 0.4292$ 214.60
1,000+$ 0.4053$ 405.30
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMinos
PackagingTO-220
Drain to Source Voltage100V
Current - Continuous Drain(Id)180A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation211W
Reverse Transfer Capacitance (Crss@Vds)210pF
RDS(on)5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.6nF
Gate Charge(Qg)108nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

The IRFB4110 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications.

Features

AI Translation
  • VDS = 100V, ID = 180A, RDS(ON) < 6mΩ @ VGS = 10V
  • Special process technology for high ESD capability
  • High density cell design for lower Rdson
  • Fully characterized avalanche voltage and current
  • Good stability and uniformity with high EAS
  • Excellent package for good heat dissipation

Applications

AI Translation
  • Power switching application
  • Hard switched and High frequency circuits
  • Uninterruptible power supply