Minos IRFB4310
| Manufacturer | MinosAsian Brands |
| MPN | IRFB4310 |
| LCSC Part # | C19189953 |
| Packaging | TO-220 |
| Customer # | |
| Key Attributes | MOSFET N-CH 100V 110A TO-220 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Minos | |
| Packaging | TO-220 | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 110A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 230W | |
| Reverse Transfer Capacitance (Crss@Vds) | 420pF | |
| RDS(on) | 8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 8.05nF | |
| Gate Charge(Qg) | 160nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The IRFB4310 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications.
Features
AI Translation
- VDS = 100V, ID = 110A, RDS(ON) < 8mΩ @ VGS = 10V
- Special process technology for high ESD capability
- High density cell design for lower Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
Applications
AI Translation
- Power switching application
- Hard switched and High frequency circuits
- Uninterruptible power supply
In-Stock: 186
186 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.7979$ 0.7182 | $ 0.72 |
| 10+ | $ 0.6475$ 0.5828 | $ 5.83 |
| 50+ | $ 0.5715$ 0.5144 | $ 25.72 |
| 100+ | $ 0.4971$ 0.4474 | $ 44.74 |
| 500+ | $ 0.4528$ 0.4076 | $ 203.80 |
| 1,000+ | $ 0.4307$ 0.3877 | $ 387.70 |
Standard Packaging50/Full Tube | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Minos | |
| Packaging | TO-220 | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 110A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 230W | |
| Reverse Transfer Capacitance (Crss@Vds) | 420pF | |
| RDS(on) | 8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 8.05nF | |
| Gate Charge(Qg) | 160nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The IRFB4310 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications.
Features
AI Translation
- VDS = 100V, ID = 110A, RDS(ON) < 8mΩ @ VGS = 10V
- Special process technology for high ESD capability
- High density cell design for lower Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
Applications
AI Translation
- Power switching application
- Hard switched and High frequency circuits
- Uninterruptible power supply
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



