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Minos IRF3205RoHS

Manufacturer
MinosAsian Brands
MPN
IRF3205
LCSC Part #
C19189952
Packaging
TO-220
Customer #
Key Attributes
MOSFET N-CH 55V 110A TO-220
Datasheetpdf iconMinos IRF3205
In-Stock: 1,159
1,159 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.4132$ 0.41
10+$ 0.3293$ 3.29
50+$ 0.2696$ 13.48
100+$ 0.2244$ 22.44
500+$ 0.205$ 102.50
1,000+$ 0.1921$ 192.10
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMinos
PackagingTO-220
Drain to Source Voltage55V
Current - Continuous Drain(Id)110A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation210W
Reverse Transfer Capacitance (Crss@Vds)211pF
RDS(on)9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.247nF
Gate Charge(Qg)146nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

IRF3205, the silicon N-channel Enhanced MOSFETS, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for Synchronous Rectification, inverter systems, high speed switching and general purpose applications.

Features

AI Translation
  • VDS = 55V
  • ID = 110A
  • RDS(ON) < 9mΩ @ VGS = 10V
  • Fast Switching
  • Low Crss
  • 100% avalanche tested
  • Improved dv/dt capability
  • RoHS product

Applications

AI Translation
  • Power management for 12V inverter systems
  • Synchronous Rectification