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Tritech-MOS TMG0069N04DFRoHS

Manufacturer
Tritech-MOSAsian Brands
MPN
TMG0069N04DF
LCSC Part #
C19189166
Packaging
PDFN-8L(3x3)
Customer #
Key Attributes
N-Channel Enhancement Mosfet
Datasheetpdf iconTritech-MOS TMG0069N04DF
In-Stock: 7,185
7,185 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1711$ 0.1626$ 0.81
50+$ 0.1353$ 0.1286$ 6.43
150+$ 0.1199$ 0.1140$ 17.10
500+$ 0.1008$ 0.0958$ 47.90
2,500+$ 0.0922$ 0.0876$ 219.00
5,000+$ 0.0871$ 0.0828$ 414.00
Standard Packaging5000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerTritech-MOS
PackagingPDFN-8L(3x3)
Drain to Source Voltage40V
Current - Continuous Drain(Id)60A
Output Capacitance(Coss)193pF
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation39W
RDS(on)6.9mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)38pF
Number1 N-channel
Input Capacitance(Ciss)690pF
Gate Charge(Qg)5.8nC@4.5V
TypeN-Channel

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation
  • Low on-resistance RDS(ON)
  • RoHS compliant and halogen-free

Features

AI Translation
  • Drain-source voltage V DS = 40V, drain current I D = 60A
  • On-resistance R DS(ON) = 6.9mΩ (typical) at gate-source voltage V GS = 10V
  • 100% tested for single-pulse avalanche ruggedness
  • 100% tested for gate resistance

Applications

AI Translation
  • Load Switch - Pulse Width Modulation (PWM)