Tokmas IRFP4568PBF(TOKMAS)
| Manufacturer | TokmasAsian Brands |
| MPN | IRFP4568PBF(TOKMAS) |
| LCSC Part # | C19184246 |
| Packaging | TO-247 |
| Customer # | |
| Key Attributes | MOSFET N-CH 150V 150A TO-247 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Tokmas | |
| Packaging | TO-247 | |
| Drain to Source Voltage | 150V | |
| Output Capacitance(Coss) | 582pF | |
| Current - Continuous Drain(Id) | 150A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 208W | |
| Reverse Transfer Capacitance (Crss@Vds) | 62pF | |
| RDS(on) | 5.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9.018nF | |
| Gate Charge(Qg) | 130nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 25 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-Channel MOSFET uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
AI Translation
- VDS = 150V, ID = 150A, RDS(ON) < mΩ, @VGS(ON) = 10V
- Low gate charge
- Green device available
- Advanced high cell denity trench technology for ultra Iow RDS(ON)
- Excellent package for good heat dissipation
In-Stock: 284
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Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.556 | $ 1.56 |
| 10+ | $ 1.3102 | $ 13.10 |
| 25+ | $ 1.1963 | $ 29.91 |
| 100+ | $ 1.0384 | $ 103.84 |
| 400+ | $ 0.9684 | $ 387.36 |
| 800+ | $ 0.9375 | $ 750.00 |
Standard Packaging25/Full Tube | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Tokmas | |
| Packaging | TO-247 | |
| Drain to Source Voltage | 150V | |
| Output Capacitance(Coss) | 582pF | |
| Current - Continuous Drain(Id) | 150A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 208W | |
| Reverse Transfer Capacitance (Crss@Vds) | 62pF | |
| RDS(on) | 5.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9.018nF | |
| Gate Charge(Qg) | 130nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 25 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-Channel MOSFET uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
AI Translation
- VDS = 150V, ID = 150A, RDS(ON) < mΩ, @VGS(ON) = 10V
- Low gate charge
- Green device available
- Advanced high cell denity trench technology for ultra Iow RDS(ON)
- Excellent package for good heat dissipation
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



