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UMW NDT452AP(UMW)RoHS

Manufacturer
UMWAsian Brands
MPN
NDT452AP(UMW)
LCSC Part #
C19100578
Packaging
SOT-223
Customer #
Key Attributes
MOSFET P-CH 30V 5A SOT-223
Datasheetpdf iconUMW NDT452AP(UMW)
In-Stock: 285
285 In stock, ships now
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QtyUnit PriceTotal Amount
5+$ 0.2316$ 1.16
50+$ 0.1813$ 9.07
150+$ 0.1597$ 23.96
500+$ 0.1327$ 66.35
2,500+$ 0.1202$ 300.50
5,000+$ 0.113$ 565.00
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerUMW
PackagingSOT-223
Drain to Source Voltage30V
Output Capacitance(Coss)430pF
Current - Continuous Drain(Id)5A
Operating Temperature --65℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation3W
RDS(on)52mΩ@10V;85mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)160pF
Number1 P-Channel
Input Capacitance(Ciss)690pF
Gate Charge(Qg)22nC@10V
TypeP-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

P-channel enhancement-mode power MOSFET in SOT-223 package, specially optimized for minimal on-resistance and superior switching performance.

Features

AI Translation
  • V_DS = -30V
  • I_D = -5A
  • R_DS(ON) < 65mΩ (V_GS = -10V)
  • R_DS(ON) < 100mΩ (V_GS = -4.5V)
  • High power and current handling capability in widely used SMT packages.
  • High-density cell design for ultra-low R_DS(ON).