NCE NCE6525Q
| Fabricant | NCEAsian Brands |
| Réf. Fab. | NCE6525Q |
| Réf. LCSC | C19089467 |
| Condit. | DFN-8L(3.3x3.3) |
| Numéro Client | |
| Caract. clés | DFN-8L(3.3x3.3) Single FETs, MOSFETs RoHS |
| Fiche Technique |
Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | NCE | |
| Condit. | DFN-8L(3.3x3.3) |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | NCE |
| Type | Description | |
|---|---|---|
| Condit. | DFN-8L(3.3x3.3) |
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Description
Traduction par IA
NCE6525Q utilizes advanced trench technology and design to deliver excellent RDS(ON) with low gate charge. It is suitable for a wide range of applications.
Caractéristiques
Traduction par IA
- VDS = 65V, ID = 25A
- RDS(ON) < 20 mΩ (@ VGS = 10V)
- RDS(ON) < 25 mΩ (@ VGS = 4.5V)
- High-density cell design for ultra-low on-resistance
- Fully characterized avalanche voltage and current
- Excellent stability and consistency at high EAS
- Superior thermally efficient package
- Special process technology with high ESD capability
Applications
Traduction par IA
- Power switching applications
- Hard switching and high-frequency circuits
- Uninterruptible power supplies
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| Qté | Prix unit.(Référence uniquement) | Montant total |
|---|---|---|
| 1+ | $ 0.515 | $ 0.52 |
| 200+ | $ 0.206 | $ 41.20 |
| 500+ | $ 0.1996 | $ 99.80 |
| 1,000+ | $ 0.1964 | $ 196.40 |
Boîtier Standard5000/Full Reel | ||
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Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | NCE | |
| Condit. | DFN-8L(3.3x3.3) |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | NCE |
| Type | Description | |
|---|---|---|
| Condit. | DFN-8L(3.3x3.3) |
Signaler une erreurAfficher les produits similaires (0) >
Description
Traduction par IA
NCE6525Q utilizes advanced trench technology and design to deliver excellent RDS(ON) with low gate charge. It is suitable for a wide range of applications.
Caractéristiques
Traduction par IA
- VDS = 65V, ID = 25A
- RDS(ON) < 20 mΩ (@ VGS = 10V)
- RDS(ON) < 25 mΩ (@ VGS = 4.5V)
- High-density cell design for ultra-low on-resistance
- Fully characterized avalanche voltage and current
- Excellent stability and consistency at high EAS
- Superior thermally efficient package
- Special process technology with high ESD capability
Applications
Traduction par IA
- Power switching applications
- Hard switching and high-frequency circuits
- Uninterruptible power supplies
Conformité & Codes d'Exportation
| Type | Détails |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Détails |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Détails |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

