onsemi NCP5109BDR2G

The NCP5109 is a high voltage gate driver IC providing two outputs for direct drive of 2 N. −channel power MOSFETs or IGBTs arranged in a half−bridge configuration version B or any other high−side + low−side configuration version A. It uses the bootstrap technique to ensure a proper drive of the high−side power switch. The driver works with 2 independent inputs.

• High Voltage Range: Up to 200 V
• dV/dt Immunity ±50 V /nsec
• Negative Current Injection Characterized Over the Temperature Range
• Gate Drive Supply Range from 10 V to 20 V
• High and Low Drive Outputs
• Output Source / Sink Current Capability 250 mA / 500 mA
• 3.3 V and 5 V Input Logic Compatible
• Up to VCC Swing on Input Pins
• Extended Allowable Negative Bridge Pin Voltage Swing to -10 V for Signal Propagation
• Matched Propagation Delays Between Both Channels
• Outputs in Phase with the Inputs
• Independent Logic Inputs to Accommodate All Topologies (Version A)
• Cross Conduction Protection with 100 ns Internal Fixed Dead Time (Version B)
• Under VCC LockOut (UVLO) for Both Channels
• Pin−to−Pin Compatible with Industry Standards
• These are Pb−Free Devices

• Half−Bridge Power Converters
• Any Complementary Drive Converters (Asymmetrical Half−Bridge, Active Clamp) (A Version Only)
• Full−Bridge Converters