VBsemi Elec IPD06N03LAG-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | IPD06N03LAG-VB |
| LCSC Part # | C18794953 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET N-CH 20V 100A TO-252 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 730pF | |
| Current - Continuous Drain(Id) | 100A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 71W | |
| Reverse Transfer Capacitance (Crss@Vds) | 375pF | |
| RDS(on) | 4.5mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.66nF | |
| Gate Charge(Qg) | 26nC@4.5V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Trench power MOSFET
- Maximum junction temperature 175°C
- 100% gate resistance (Rg) tested
- Drain connected to heatsink
- N-channel MOSFET
Applications
AI Translation
- Isolated DC/DC Converter
In-Stock: 59
59 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.542 | $ 0.54 |
| 10+ | $ 0.433 | $ 4.33 |
| 30+ | $ 0.3858 | $ 11.57 |
| 100+ | $ 0.3272 | $ 32.72 |
| 500+ | $ 0.2686 | $ 134.30 |
| 1,000+ | $ 0.2523 | $ 252.30 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 730pF | |
| Current - Continuous Drain(Id) | 100A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 71W | |
| Reverse Transfer Capacitance (Crss@Vds) | 375pF | |
| RDS(on) | 4.5mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.66nF | |
| Gate Charge(Qg) | 26nC@4.5V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Trench power MOSFET
- Maximum junction temperature 175°C
- 100% gate resistance (Rg) tested
- Drain connected to heatsink
- N-channel MOSFET
Applications
AI Translation
- Isolated DC/DC Converter
C18794953 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



