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Littelfuse LF11115TMR product image
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Littelfuse LF11115TMRRoHS

Manufacturer
MPN
LF11115TMR
LCSC Part #
C1851958
Packaging
SOT-23
Customer #
Key Attributes
High Sensitivity Low Power TMR Switch
Datasheetpdf iconLittelfuse LF11115TMR
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QtyUnit Price(Reference Only)Total Amount
1+$ 1.806$ 1.81
10+$ 1.5329$ 15.33
30+$ 1.3624$ 40.87
100+$ 1.1874$ 118.74
500+$ 1.1089$ 554.45
1,000+$ 1.0742$ 1074.20
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategorySensors, Transducers/Magnetic Sensors/Switches (Solid State)
ManufacturerLittelfuse
PackagingSOT-23
Operation Points1.7mT
Supply Current200nA
Release Points1.7mT
Voltage - Supply1.8V~5.5V
FeaturesBuilt-in Schmitt trigger

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The LF11115TMR TMR Switch is a digital bipolar magnetic switch that integrates TMR and CMOS technology in order to provide a magnetically triggered digital switch with high sensitivity, high speed, and low power consumption. It contains a TMR magnetic sensor and CMOS signal processing circuitry within the same package, including an on-chip TMR voltage generator for precise magnetic sensing, a TMR voltage amplifier and comparator plus a Schmitt trigger to provide switching hysteresis for noise rejection, CMOS push-pull output and X axis sensing direction. An internal band gap regulator is used to provide a temperature compensated supply voltage for internal circuits, permitting a wide range of supply voltages. It draws only 200nA (see Features below) resulting in low power operation, additionally it has fast response, accurate switching points, excellent thermal stability, and immunity to stray field interference. It is available in the SOT23-3 package. The output of the LF11115TMR switches low (turns on) when the magnetic field parallel to the sensing axis exceeds the operate point threshold, B(OP). When the magnetic field is reduced below the release point B(RP) device output switches high (turns off). The difference between the B(OP) and the B(RP) is the hysteresis B(H) of the device.

Features

AI Translation
  • Tunneling Magnetoresistance (TMR) technology - Ultra low power consumption at 200nA
  • X axis sensing direction - High frequency up to 50Hz - Operation with north and south pole - 1.8V to 5.5V operating range

Applications

AI Translation
  • Proximity detection
  • Utility meters including gas and water meters
  • Speed sensing
  • Battery powered applications
  • Power sensing