onsemi NDS9952A
| Manufacturer | |
| MPN | NDS9952A |
| LCSC Part # | C184653 |
| Packaging | SO-8 |
| Customer # | |
| Key Attributes | 3.7A 2.8V 1.6W 130mΩ@10V N-Channel + P-Channel SO-8 Single FETs, MOSFETs RoHS |
| Datasheet |  onsemi NDS9952A |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SO-8 | |
| Drain to Source Voltage | - | |
| Output Capacitance(Coss) | 260pF | |
| Current - Continuous Drain(Id) | 3.7A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.8V | |
| Pd - Power Dissipation | 1.6W | |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF | |
| RDS(on) | 130mΩ@10V | |
| Number | - | |
| Input Capacitance(Ciss) | 350pF | |
| Gate Charge(Qg) | 27nC@10V | |
| Type | N-Channel + P-Channel |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
These dual N-channel and P-channel enhancement-mode power MOSFETs are manufactured using a proprietary high cell density DMOS process. This ultra-high density process is specifically designed to minimize on-resistance, provide superior switching performance, and withstand high energy pulses in avalanche and commutation modes. These devices are particularly suited for low-voltage applications such as notebook computer power management and other battery-powered circuits requiring fast switching, low in-line power dissipation, and immunity to transients.
Features
- N-channel 3.7A, 30V, R<sub>DS(ON)</sub> = 0.08 Ω (at V<sub>GS</sub> = 10 V).
- P-channel -2.9A, -30V, R<sub>DS(ON)</sub> = 0.13 Ω (at V<sub>GS</sub> = -10 V).
- High-density cell design for ultra-low R<sub>DS(ON)</sub>.
- High power and current handling capability in widely used SMT packages.
- Dual (N- and P-channel) MOSFET in SMT package.
Applications
- DC/DC Converter — Ideal for high-frequency switching and synchronous rectification applications
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.3061 | $ 0.31 |
| 10+ | $ 0.3 | $ 3.00 |
| 30+ | $ 0.2969 | $ 8.91 |
| 100+ | $ 0.2923 | $ 29.23 |
Standard Packaging2500/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SO-8 | |
| Drain to Source Voltage | - | |
| Output Capacitance(Coss) | 260pF | |
| Current - Continuous Drain(Id) | 3.7A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.8V | |
| Pd - Power Dissipation | 1.6W | |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF | |
| RDS(on) | 130mΩ@10V | |
| Number | - | |
| Input Capacitance(Ciss) | 350pF | |
| Gate Charge(Qg) | 27nC@10V | |
| Type | N-Channel + P-Channel |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
These dual N-channel and P-channel enhancement-mode power MOSFETs are manufactured using a proprietary high cell density DMOS process. This ultra-high density process is specifically designed to minimize on-resistance, provide superior switching performance, and withstand high energy pulses in avalanche and commutation modes. These devices are particularly suited for low-voltage applications such as notebook computer power management and other battery-powered circuits requiring fast switching, low in-line power dissipation, and immunity to transients.
Features
- N-channel 3.7A, 30V, R<sub>DS(ON)</sub> = 0.08 Ω (at V<sub>GS</sub> = 10 V).
- P-channel -2.9A, -30V, R<sub>DS(ON)</sub> = 0.13 Ω (at V<sub>GS</sub> = -10 V).
- High-density cell design for ultra-low R<sub>DS(ON)</sub>.
- High power and current handling capability in widely used SMT packages.
- Dual (N- and P-channel) MOSFET in SMT package.
Applications
- DC/DC Converter — Ideal for high-frequency switching and synchronous rectification applications
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |