- Pinout
- Footprint
VISHAY IRF9540PBF
| Manufacturer | |
| MPN | IRF9540PBF |
| LCSC Part # | C183014 |
| Packaging | TO-220AB |
| Customer # | |
| Key Attributes | MOSFET P-CH 100V 19A TO-220AB |
| Datasheet |  VISHAY IRF9540PBF |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | TO-220AB | |
| Configuration | - | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 590pF | |
| Current - Continuous Drain(Id) | 19A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 150W | |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF | |
| RDS(on) | 200mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.4nF | |
| Gate Charge(Qg) | 61nC@10V | |
| Type | P-Channel |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
Third generation Power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
Features
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- P-Channel
- 175 °C Operating Temperature
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- Compliant to RoHS Directive 2002/95/EC
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.1907 | $ 1.19 |
| 10+ | $ 0.9727 | $ 9.73 |
| 50+ | $ 0.7889 | $ 39.45 |
| 100+ | $ 0.6816 | $ 68.16 |
| 500+ | $ 0.6165 | $ 308.25 |
| 1,000+ | $ 0.584 | $ 584.00 |
Standard Packaging50/Full Tube | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | TO-220AB | |
| Configuration | - | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 590pF | |
| Current - Continuous Drain(Id) | 19A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 150W | |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF | |
| RDS(on) | 200mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.4nF | |
| Gate Charge(Qg) | 61nC@10V | |
| Type | P-Channel |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
Third generation Power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
Features
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- P-Channel
- 175 °C Operating Temperature
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- Compliant to RoHS Directive 2002/95/EC
C183014 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |