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onsemi MUN5233DW1T1GRoHS

Manufacturer
MPN
MUN5233DW1T1G
LCSC Part #
C182463
Packaging
SOT-363
Customer #
Key Attributes
TRANS PREBIAS 50V SOT-363
Datasheetpdf icononsemi MUN5233DW1T1G
In-Stock: 5,885
5,885 In stock, ships now
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QtyUnit PriceTotal Amount
5+$ 0.0965$ 0.48
50+$ 0.0781$ 3.91
150+$ 0.0689$ 10.34
500+$ 0.062$ 31.00
3,000+$ 0.0546$ 163.80
6,000+$ 0.0518$ 310.80
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased
Manufactureronsemi
PackagingSOT-363
Current - Collector Cutoff100nA
DC Current Gain80
Vce Saturation(VCE(sat))250mV
Output Voltage(VO(on))200mV
Input Resistor4.7kΩ
Resistor Ratio0.1
Pd - Power Dissipation187mW
Voltage - Input(Max)(VI(off))600mV@100uA,5V
Input Voltage (VI(on)@Ic,Vce)900mV@5mA,0.2V
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V
typeNPN
Number2 NPN (Pre-Biased)
Operating Temperature-55℃~+150℃

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This series of digital transistors is designed to replace discrete devices and their external resistor bias networks. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network comprising two resistors: a series base resistor and a base-emitter resistor. The BRT eliminates these discrete components by integrating them into a single device. Using BRTs reduces system cost and saves board space.

Features

AI Translation
  • Simplified circuit design
  • Board space savings
  • Reduced component count
  • S and NSV prefixes for automotive and other applications requiring unique site of origin and controlled change requirements; AEC-Q101 qualified and PPAP capable
  • These devices are Pb-free, halogen-free/BFR-free, and RoHS compliant