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EDA ModelsEasyEDA
onsemi MUN5233DW1T1G
| Manufacturer | |
| MPN | MUN5233DW1T1G |
| LCSC Part # | C182463 |
| Packaging | SOT-363 |
| Customer # | |
| Key Attributes | TRANS PREBIAS 50V SOT-363 |
| Datasheet |  onsemi MUN5233DW1T1G |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Manufacturer | onsemi | |
| Packaging | SOT-363 | |
| Current - Collector Cutoff | 100nA | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 4.7kΩ | |
| Resistor Ratio | 0.1 | |
| Pd - Power Dissipation | 187mW | |
| Voltage - Input(Max)(VI(off)) | 600mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 900mV@5mA,0.2V | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN | |
| Number | 2 NPN (Pre-Biased) | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Manufacturer | onsemi | |
| Packaging | SOT-363 | |
| Current - Collector Cutoff | 100nA | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 4.7kΩ | |
| Resistor Ratio | 0.1 |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 187mW | |
| Voltage - Input(Max)(VI(off)) | 600mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 900mV@5mA,0.2V | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN | |
| Number | 2 NPN (Pre-Biased) | |
| Operating Temperature | -55℃~+150℃ |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This series of digital transistors is designed to replace discrete devices and their external resistor bias networks. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network comprising two resistors: a series base resistor and a base-emitter resistor. The BRT eliminates these discrete components by integrating them into a single device. Using BRTs reduces system cost and saves board space.
Features
AI Translation
- Simplified circuit design
- Board space savings
- Reduced component count
- S and NSV prefixes for automotive and other applications requiring unique site of origin and controlled change requirements; AEC-Q101 qualified and PPAP capable
- These devices are Pb-free, halogen-free/BFR-free, and RoHS compliant
In-Stock: 5,105
5,105 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.0965 | $ 0.48 |
| 50+ | $ 0.0781 | $ 3.91 |
| 150+ | $ 0.0689 | $ 10.34 |
| 500+ | $ 0.062 | $ 31.00 |
| 3,000+ | $ 0.0546 | $ 163.80 |
| 6,000+ | $ 0.0518 | $ 310.80 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Manufacturer | onsemi | |
| Packaging | SOT-363 | |
| Current - Collector Cutoff | 100nA | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 4.7kΩ | |
| Resistor Ratio | 0.1 | |
| Pd - Power Dissipation | 187mW | |
| Voltage - Input(Max)(VI(off)) | 600mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 900mV@5mA,0.2V | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN | |
| Number | 2 NPN (Pre-Biased) | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Manufacturer | onsemi | |
| Packaging | SOT-363 | |
| Current - Collector Cutoff | 100nA | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 4.7kΩ | |
| Resistor Ratio | 0.1 |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 187mW | |
| Voltage - Input(Max)(VI(off)) | 600mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 900mV@5mA,0.2V | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN | |
| Number | 2 NPN (Pre-Biased) | |
| Operating Temperature | -55℃~+150℃ |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This series of digital transistors is designed to replace discrete devices and their external resistor bias networks. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network comprising two resistors: a series base resistor and a base-emitter resistor. The BRT eliminates these discrete components by integrating them into a single device. Using BRTs reduces system cost and saves board space.
Features
AI Translation
- Simplified circuit design
- Board space savings
- Reduced component count
- S and NSV prefixes for automotive and other applications requiring unique site of origin and controlled change requirements; AEC-Q101 qualified and PPAP capable
- These devices are Pb-free, halogen-free/BFR-free, and RoHS compliant
C182463 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |