Nexperia PBSS4041NX,115
| Manufacturer | |
| MPN | PBSS4041NX,115 |
| LCSC Part # | C182379 |
| Packaging | SOT-89 |
| Customer # | |
| Key Attributes | TRANS NPN 60V 6.2A SOT-89 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | Nexperia | |
| Packaging | SOT-89 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 130MHz | |
| Collector - Emitter Voltage VCEO | 60V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 150 | |
| Current - Collector(Ic) | 6.2A | |
| Pd - Power Dissipation | 2.5W | |
| Number | 1 NPN | |
| type | NPN | |
| Operating Temperature | -55℃~+150℃ | |
| Vce Saturation(VCE(sat)) | 210mV |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4041PX.
Features
AI Translation
- Very low collector-emitter saturation voltage VCEsat
- High collector current capability lC and ICM
- High collector current gain (hFE) at high lC
- High energy efficiency due to less heat generation
- AEC-Q101 qualified
- Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
Applications
AI Translation
- Loadswitch
- Battery-driven devices
- Power management
- Charging circuits
- Power switches (e.g. motors, fans)
In-Stock: 451
451 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.0791 | $ 1.08 |
| 10+ | $ 0.8341 | $ 8.34 |
| 30+ | $ 0.7124 | $ 21.37 |
| 100+ | $ 0.5923 | $ 59.23 |
| 500+ | $ 0.5193 | $ 259.65 |
| 1,000+ | $ 0.482 | $ 482.00 |
Standard Packaging1000/Full Reel | ||
Better price for more quantity?
$
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | Nexperia | |
| Packaging | SOT-89 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 130MHz | |
| Collector - Emitter Voltage VCEO | 60V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 150 | |
| Current - Collector(Ic) | 6.2A | |
| Pd - Power Dissipation | 2.5W | |
| Number | 1 NPN | |
| type | NPN | |
| Operating Temperature | -55℃~+150℃ | |
| Vce Saturation(VCE(sat)) | 210mV |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4041PX.
Features
AI Translation
- Very low collector-emitter saturation voltage VCEsat
- High collector current capability lC and ICM
- High collector current gain (hFE) at high lC
- High energy efficiency due to less heat generation
- AEC-Q101 qualified
- Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
Applications
AI Translation
- Loadswitch
- Battery-driven devices
- Power management
- Charging circuits
- Power switches (e.g. motors, fans)
C182379 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |



