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HUAYI HYG053N10NS1D product image
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HUAYI HYG053N10NS1DRoHS

Manufacturer
HUAYIAsian Brands
MPN
HYG053N10NS1D
LCSC Part #
C18236201
Packaging
TO-252-2L
Customer #
Key Attributes
MOSFET N-CH 100V 95A TO-252-2L
Datasheetpdf iconHUAYI HYG053N10NS1D
In-Stock: 2,715
2,715 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.5201$ 0.52
10+$ 0.4083$ 4.08
30+$ 0.3597$ 10.79
100+$ 0.2998$ 29.98
500+$ 0.2738$ 136.90
1,000+$ 0.2528$ 252.80
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHUAYI
PackagingTO-252-2L
Drain to Source Voltage100V
Output Capacitance(Coss)1.386nF
Current - Continuous Drain(Id)95A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.8V
Pd - Power Dissipation107.1W
RDS(on)6mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)63pF
Number1 N-channel
Input Capacitance(Ciss)3.642nF
Gate Charge(Qg)65nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation
  • Trench Power MOSFET - AlphaSGT™ Technology - Lowest R DS(ON) in class - Low switching loss - Logic level gate drive - RoHS compliant and halogen-free

Features

AI Translation
  • 100V/95A RDS(ON)=5.2mΩ(typ.) @ VGS=10V
  • 100% Avalanche Tested
  • Reliable and Rugged
  • Halogen-Free Devices Available (RoHS Compliant)

Applications

AI Translation
  • Switching Application
  • Motor control and drive
  • Battery management