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UMW FDD6680AS(UMW)RoHS

Manufacturer
UMWAsian Brands
MPN
FDD6680AS(UMW)
LCSC Part #
C18214408
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 30V 55A TO-252
Datasheetpdf iconUMW FDD6680AS(UMW)
In-Stock: 2,420
2,420 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1428$ 0.71
50+$ 0.1123$ 5.62
150+$ 0.0971$ 14.57
500+$ 0.0857$ 42.85
2,500+$ 0.0765$ 191.25
5,000+$ 0.0719$ 359.50
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerUMW
PackagingTO-252
Drain to Source Voltage30V
Output Capacitance(Coss)350pF
Current - Continuous Drain(Id)55A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation60W
RDS(on)13mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)120pF
Number1 N-channel
Input Capacitance(Ciss)1.2nF
Gate Charge(Qg)29nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

The FDD6680AS is designed to replace a discrete MOSFET and Schottky diode in synchronous DC-DC power supplies. This 30V MOSFET is optimized to maximize power conversion efficiency, offering low RDS(ON) and low gate charge. When used as a low-side switch in a synchronous rectifier, the FDD6680AS delivers performance equivalent to the FDD6680A in parallel with a Schottky diode.

Features

AI Translation
  • VDS = 30V
  • ID = 55A
  • RDS(ON) < 10.5mΩ (VGS = 5V)
  • RDS(ON) < 13mΩ (VGS = 4.5V)
  • Integrated SyncFET Schottky body diode
  • Low gate charge (typical 21nC)
  • High-performance trench technology for ultra-low RDS(ON)
  • High power and current handling capability