LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
UMW FDD8874(UMW) product image
  • FDD8874(UMW) thumbnail 1
  • FDD8874(UMW) thumbnail 2
  • FDD8874(UMW) thumbnail 3
  • Pinout
  • Footprint
Images for reference only

UMW FDD8874(UMW)RoHS

Manufacturer
UMWAsian Brands
MPN
FDD8874(UMW)
LCSC Part #
C18214404
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 30V 116A TO-252
Datasheetpdf iconUMW FDD8874(UMW)
In-Stock: 2,400
2,400 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1147$ 0.57
50+$ 0.1001$ 5.01
150+$ 0.0938$ 14.07
500+$ 0.0859$ 42.95
2,500+$ 0.0825$ 206.25
5,000+$ 0.0804$ 402.00
Standard Packaging2500/Full Reel
Better price for more quantity?
$

Products Specifications

Show similar products (0) >
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerUMW
PackagingTO-252
Drain to Source Voltage30V
Output Capacitance(Coss)585pF
Current - Continuous Drain(Id)116A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)340pF
RDS(on)4.2mΩ@10V;5.2mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.99nF
Gate Charge(Qg)54nC@10V
TypeN-Channel
Report an ErrorShow similar products (0) >

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This N-channel MOSFET is designed to enhance the overall efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low RDS(ON), and fast switching speed.

Features

AI Translation
  • VDS(V) = 30V
  • ID = 116A
  • RDS(ON) < 5.1mΩ (VGS = 10V)
  • RDS(ON) < 6.4mΩ (VGS = 4.5V)
  • Low gate resistance
  • RoHS compliant
  • High power and current handling capability
  • Ultra-low RDS(ON) achieved with advanced trench technology