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UMW FDS6685(UMW)RoHS

Manufacturer
UMWAsian Brands
MPN
FDS6685(UMW)
LCSC Part #
C18214387
Packaging
SOP-8
Customer #
Key Attributes
MOSFET P-CH 30V 8.8A SOP-8
Datasheetpdf iconUMW FDS6685(UMW)
In-Stock: 1,660
1,660 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.126$ 0.63
50+$ 0.0993$ 4.97
150+$ 0.086$ 12.90
500+$ 0.076$ 38.00
3,000+$ 0.068$ 204.00
6,000+$ 0.064$ 384.00
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerUMW
PackagingSOP-8
Drain to Source Voltage30V
Output Capacitance(Coss)408pF
Current - Continuous Drain(Id)8.8A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)202pF
RDS(on)15mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.604nF
Gate Charge(Qg)25nC@5V
TypeP-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This P-channel MOSFET is a rugged gate version based on the advanced PowerTrench process. It is optimized for power management applications requiring a wide range of gate drive voltages (4.5V – 25V).

Features

AI Translation
  • Drain-source voltage V_DS = -30V
  • Drain current I_D = -8.8A
  • On-resistance R_DS(on) < 20mΩ (gate-source voltage V_GS = -10V)
  • On-resistance R_DS(on) < 35mΩ (gate-source voltage V_GS = -4.5V)
  • High power and current handling capability
  • Advanced trench technology for ultra-low on-resistance R_DS(on)
  • Low gate charge (typical 17nC)
  • Fast switching speed