VBsemi Elec IRF7453TRPBF-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | IRF7453TRPBF-VB |
| LCSC Part # | C18212484 |
| Packaging | SO-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH 200V 3A SO-8 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | SO-8 | |
| Drain to Source Voltage | 200V | |
| Output Capacitance(Coss) | 180pF | |
| Current - Continuous Drain(Id) | 3A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 96W | |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF | |
| RDS(on) | 260mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.8nF | |
| Gate Charge(Qg) | 34nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Trench power MOSFET
- Junction temperature 175°C
- PWM optimized
- 100% gate resistance (Rg) tested
- RoHS compliant (Directive 2002/95/EC)
Applications
AI Translation
- Primary-side switch
In-Stock: 50
50 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.5631$ 0.5350 | $ 0.54 |
| 10+ | $ 0.4484$ 0.4260 | $ 4.26 |
| 30+ | $ 0.4009$ 0.3809 | $ 11.43 |
| 100+ | $ 0.3397$ 0.3228 | $ 32.28 |
| 500+ | $ 0.2785$ 0.2646 | $ 132.30 |
| 1,000+ | $ 0.2632$ 0.2501 | $ 250.10 |
Standard Packaging4000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | SO-8 | |
| Drain to Source Voltage | 200V | |
| Output Capacitance(Coss) | 180pF | |
| Current - Continuous Drain(Id) | 3A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 96W | |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF | |
| RDS(on) | 260mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.8nF | |
| Gate Charge(Qg) | 34nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Trench power MOSFET
- Junction temperature 175°C
- PWM optimized
- 100% gate resistance (Rg) tested
- RoHS compliant (Directive 2002/95/EC)
Applications
AI Translation
- Primary-side switch
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



