UMW IRFB4310Z(UMW)
| Manufacturer | UMWAsian Brands |
| MPN | IRFB4310Z(UMW) |
| LCSC Part # | C18209202 |
| Packaging | TO-220 |
| Customer # | |
| Key Attributes | MOSFET N-CH 100V 120A TO-220 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | UMW | |
| Packaging | TO-220 | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 490pF | |
| Current - Continuous Drain(Id) | 120A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V;4V | |
| Pd - Power Dissipation | 250W | |
| RDS(on) | 4.8mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 220pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.86nF | |
| Gate Charge(Qg) | 120nC@50V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Drain-source voltage (VDS): 100V
- Drain current (ID): 120A
- On-resistance (RDS(ON)) < 4.8mΩ (VGS = 10V)
- Improved gate, avalanche, and dynamic dv/dt robustness
- Fully characterized capacitance and avalanche safe operating area
- Enhanced body diode dV/dt and dI/dt capability
- Lead-free
- Halogen-free
In-Stock: 433
433 In stock, ships now
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.778 | $ 0.78 |
| 10+ | $ 0.6247 | $ 6.25 |
| 50+ | $ 0.5488 | $ 27.44 |
| 100+ | $ 0.4746 | $ 47.46 |
| 500+ | $ 0.4294 | $ 214.70 |
| 1,000+ | $ 0.4052 | $ 405.20 |
Standard Packaging50/Full Tube | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | UMW | |
| Packaging | TO-220 | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 490pF | |
| Current - Continuous Drain(Id) | 120A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V;4V | |
| Pd - Power Dissipation | 250W | |
| RDS(on) | 4.8mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 220pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.86nF | |
| Gate Charge(Qg) | 120nC@50V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Drain-source voltage (VDS): 100V
- Drain current (ID): 120A
- On-resistance (RDS(ON)) < 4.8mΩ (VGS = 10V)
- Improved gate, avalanche, and dynamic dv/dt robustness
- Fully characterized capacitance and avalanche safe operating area
- Enhanced body diode dV/dt and dI/dt capability
- Lead-free
- Halogen-free
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
