LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
PUYA PY25Q128HA-WXH-IR product image
  • PY25Q128HA-WXH-IR thumbnail 1
  • PY25Q128HA-WXH-IR thumbnail 2
  • PY25Q128HA-WXH-IR thumbnail 3
  • Pinout Diagram
  • Footprint Diagram
Images for reference only

PUYA PY25Q128HA-WXH-IRRoHS

Manufacturer
PUYAAsian Brands
MPN
PY25Q128HA-WXH-IR
LCSC Part #
C18208279
Packaging
WSON-8
Customer #
Key Attributes
2.7V~3.6V 128Mbit 133MHz SPI WSON-8 Memory (ICs) RoHS
Datasheetpdf iconPUYA PY25Q128HA-WXH-IR
In-Stock: 10,654
10,654 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.3419$ 1.34
10+$ 1.1142$ 11.14
30+$ 0.989$ 29.67
100+$ 0.8475$ 84.75
500+$ 0.7857$ 392.85
1,000+$ 0.7564$ 756.40
Standard Packaging4000/Full Reel
Better price for more quantity?
$

Products Specifications

Show similar products (0) >
TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory (ICs)
ManufacturerPUYA
PackagingWSON-8
Voltage - Supply2.7V~3.6V
Memory Size128Mbit
Operating temperature-40℃~+85℃
Program / Erase Cycles100,000 cycles
Clock Frequency133MHz
Data Retention - TDR (Year)20 Years
Page Programming Time (Tpp)2.4ms
Standby Supply Current15uA
InterfaceSPI

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging4000
Sales UnitPiece

Introduction

AI Translation

The PY25Q128HA is a serial interface Flash memory device designed for use in a wide variety of high-volume consumer-based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the device, with its page erase granularity it is ideal for data storage as well, eliminating the need for additional data storage devices. The erase block sizes of the device have been optimized to meet the needs of today's code and data storage applications. By optimizing the size of the erase blocks, the memory space can be used much more efficiently. Because certain code modules and data storage segments must reside by themselves in their own erase regions, the wasted and unused memory space that occurs with large sectored and large block erase Flash memory devices can be greatly reduced. This increased memory space efficiency allows additional code routines and data storage segments to be added while still maintaining the same overall device density. The device also contains an additional 3*1024 -byte security registers with OTP lock (One-Time Programmable), can be used for purposes such as un

Features

AI Translation
  • Supply Range from 2.7 to 3.6V for Read, Erase and Program
  • Ultra-Low Power consumption for Read, Erase and Program
  • X1, X2 and X4 Multi I/O, QPI, DTR Support
  • High reliability with 100K cycling and 20 Year-retention
  • Single 2.7 to 3.6V supply
  • Industrial Temperature Range -40C to 85C
  • Serial Peripheral Interface (SPI) Compatible: Mode 0 and Mode 3
  • Single, Dual, Quad SPI, QPI, DTR
  • Flexible Architecture for Code and Data Storage
  • Uniform 256-byte Page Program
  • Uniform 4K-byte Sector Erase
  • Uniform 32K/64K Erase
  • Full Chip Erase
  • Hardware Controlled Locking of Protected Sectors by WP# Pin
  • One Time Programmable (OTP) Security Register 3*1024 -Byte Security Registers with OTP Lock
  • 128-bit Unique ID for each device
  • Fast Program and Erase Speed Typical
  • 0.5ms Page program time
  • 50ms 4K-byte sector erase time
  • 0.16s 32K-byte block erase time
  • 0.3s 64K-byte block erase time
  • JEDEC Standard Manufacturer and Device ID Read Methodology
  • Ultra-Low Power Consumption Typical
  • 0.2uA Deep Power Down current
  • 15uA Standby current
  • 3.0mA Active Read current at 85MHz
  • 10mA Active Program or Erase current
  • High Reliability 100,000 Program / Erase Cycles 20-year Data Retention
  • Industry Standard Green Package Options
  • 8-pin SOP (150mil/208mil)
  • 8-land WSON (6x5x0.75mm)
  • 8-land USON (4x4x0.45mm)
  • KGD for SiP