UMW BSP170P(UMW)
| Manufacturer | UMWAsian Brands |
| MPN | BSP170P(UMW) |
| LCSC Part # | C18207549 |
| Packaging | SOT-223 |
| Customer # | |
| Key Attributes | MOSFET P-CH 60V 1.9A SOT-223 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | UMW | |
| Packaging | SOT-223 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 105pF | |
| Current - Continuous Drain(Id) | 1.9A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 1.8W | |
| RDS(on) | 239mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 328pF | |
| Gate Charge(Qg) | 10nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- V_DS(V) = -60V
- I_D = -1.9A
- R_DS(ON) < 150mΩ (V_GS = -10V)
- Enhancement mode
- Avalanche rated
- dv/dt rated
- Lead-free plating; RoHS compliant
In-Stock: 3,010
3,010 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1425 | $ 0.71 |
| 50+ | $ 0.1119 | $ 5.60 |
| 150+ | $ 0.0966 | $ 14.49 |
| 500+ | $ 0.0851 | $ 42.55 |
| 2,500+ | $ 0.076 | $ 190.00 |
| 5,000+ | $ 0.0714 | $ 357.00 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | UMW | |
| Packaging | SOT-223 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 105pF | |
| Current - Continuous Drain(Id) | 1.9A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 1.8W | |
| RDS(on) | 239mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 328pF | |
| Gate Charge(Qg) | 10nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- V_DS(V) = -60V
- I_D = -1.9A
- R_DS(ON) < 150mΩ (V_GS = -10V)
- Enhancement mode
- Avalanche rated
- dv/dt rated
- Lead-free plating; RoHS compliant
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
