VISHAY SIC653ACD-T1-GE3

The SiC653 and SiC653A are integrated power stage solutions optimized for synchronous buck applications to offer high current, high efficiency, and high power density performance. Packaged in Vishay’s proprietary 5 mmx5 mm MLP package, SiC653 and SiC653A enables voltage regulator designs to deliver up to 50 A continuous current per phase. The internal power MOSFETs utilizes Vishay’s state-of-the-art Gen IV TrenchFET technology that delivers industry benchmark performance to significantly reduce switching and conduction losses. The SiC653 and SiC653A incorporates an advanced MOSFET gate driver IC that features high current driving capability, adaptive dead-time control, an integrated bootstrap Schottky diode, a thermal warning (THWn) that alerts the system of excessive junction temperature, and zero current detect to improve light load efficiency. The drivers are also compatible with a wide range of PWM controllers and supports tri-state PWM, 3.3 V (SiC653A) / 5 V (SiC653) PWM logic.

• Thermally enhanced PowerPAK MLP55-31 L package
• Vishay’s Gen V MOSFET technology and a low-side MOSFET with integrated Schottky diode
• Delivers up to 50 A continuous current
• 95 % peak efficiency
• High frequency operation up to 1.5 MHz
• Power MOSFETs optimized for 12V input stage
• 3.3 V (SiC653A) / 5 V (SiC653) PWM logic with tri-state and hold-off
• Zero current detect control for light load efficiency improvement
• Low PWM propagation delay (<20 ns)
• Thermal monitor flag
• Under voltage lockout protection

• Multi-phase VRDs for CPU, GPU, and memory