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Wuxi Maxinmicro MX16171D100
| Manufacturer | Wuxi MaxinmicroAsian Brands |
| MPN | MX16171D100 |
| LCSC Part # | C18197522 |
| Packaging | DFN-8L(2x3) |
| Customer # | |
| Key Attributes | 100V Input High-Side OR-ing FET Controller |
| Datasheet |  Wuxi Maxinmicro MX16171D100 |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Circuit Protection/Transient Voltage Suppressors (TVS)/Surge Protection Devices (SPDs) | |
| Manufacturer | Wuxi Maxinmicro | |
| Packaging | DFN-8L(2x3) | |
| Features | Reverse current blocking;With enable |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The MX16171D100/MX16171S100 high-side OR-ing FET controller works with an external MOSFET to function as an ideal diode rectifier when connected in series with a power supply. The OR-ing controller enables the MOSFET to replace diode rectifiers in power distribution networks, reducing power dissipation and voltage drop.
The MX16171D100/MX16171S100 controller provides charge pump gate drive for an external N-channel MOSFET and features a fast-response comparator that turns off the FET when current flows in reverse. The MX16171D100/MX16171S100 can connect to power supplies from 1V to 100V (a separate VS supply is required when the input voltage is between 1V and 4V) and can withstand transient voltages up to 110V.
At initial power-up, load current flows through the MOSFET body diode from source to drain. Once the voltage across the body diode exceeds VSD(REG), the MX16171D100/MX16171S100 begins charging the MOSFET gate via a 30μA (typical) charge pump current source. During forward operation, the MOSFET gate is charged until it reaches the clamp voltage of the internal 14V gate-to-input-pin zener diode within the MX16171D100/MX16171S100.
The MX16171D100/MX16171S100 is designed to regulate the MOSFET gate-to-source voltage. If MOSFET current decreases such that the voltage across the MOSFET falls below the VSD(REG) voltage regulation point of 30mV (typical), the gate pin voltage will decrease until the voltage across the MOSFET is regulated to 20mV. If the source-to-drain voltage exceeds the VSD(REG) voltage, the gate-to-source voltage will increase, ultimately reaching the 14V gate-to-input-pin zener clamp level.
If MOSFET current reverses — possibly due to an input supply failure — causing the voltage across the MX16171D100/MX16171S100 input and output pins to become more negative than the VSD(REV) voltage of -15mV (typical), the MX16171D100/MX16171S100 will rapidly discharge the MOSFET gate through a strong gate-to-input-pin discharge transistor. If the input supply fails suddenly — for example, a supply shorted directly to ground — reverse current will temporarily flow through the MOSFET until the gate is fully discharged. This reverse current originates from the load capacitance and parallel-connected power supplies. The MX16171D100/MX16171S100 typically responds to a voltage reversal condition within 50ns. The actual time required to turn off the MOSFET depends on the charge held by the gate capacitance of the MOSFET used. A MOSFET with an effective gate capacitance of 47nF can typically be turned off within 260ns. This fast turn-off time minimizes voltage disturbances at the output and current transients from redundant power supplies.
The VS pin of the MX16171D100/MX16171S100 is the main supply pin for all internal biasing and serves as the auxiliary supply for the internal gate drive charge pump.
For a typical MX16171D100/MX16171S100 application, the VS pin can be connected directly to the output pin. The capacitance value should be the minimum required to achieve acceptable filtering of voltage noise.
If the VS pin is powered while the input pin is floating or grounded, approximately 0.5mA of current will leak from the VS pin into the IC, and approximately 2mA of current will leak from the output pin into the IC.
The OFF pin is a logic-level input pin that controls gate drive to the external MOSFET. The maximum operating voltage on this pin is 5.5V.
When the OFF pin is driven high, the MOSFET turns off regardless of the detected input and output voltages. In this mode, load current flows through the MOSFET body diode. If the MOSFET operates normally through the body diode, the voltage difference between the input and output pins is approximately 700mV.
The OFF pin has an internal 5μA (typical) pull-down current. If the OFF function is not required, this pin may be left floating or connected to ground.
Features
- Wide input voltage range VIN: 5V to 100V
- 110V transient voltage
- Charge pump gate driver for external N-channel MOSFET
- 50ns fast response to current reversal
- 2A peak gate turn-off current
- Ultra-low VDS turn-off voltage reduces turn-off time
- DFN2×3-8L and SOP8 packages
Applications
Active OR-Gate for Redundant (N+1) Power Supplies
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.6226 | $ 0.62 |
| 10+ | $ 0.4867 | $ 4.87 |
| 30+ | $ 0.4188 | $ 12.56 |
| 100+ | $ 0.3525 | $ 35.25 |
| 500+ | $ 0.3348 | $ 167.40 |
| 1,000+ | $ 0.3137 | $ 313.70 |
Standard Packaging3000/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Circuit Protection/Transient Voltage Suppressors (TVS)/Surge Protection Devices (SPDs) | |
| Manufacturer | Wuxi Maxinmicro | |
| Packaging | DFN-8L(2x3) | |
| Features | Reverse current blocking;With enable |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The MX16171D100/MX16171S100 high-side OR-ing FET controller works with an external MOSFET to function as an ideal diode rectifier when connected in series with a power supply. The OR-ing controller enables the MOSFET to replace diode rectifiers in power distribution networks, reducing power dissipation and voltage drop.
The MX16171D100/MX16171S100 controller provides charge pump gate drive for an external N-channel MOSFET and features a fast-response comparator that turns off the FET when current flows in reverse. The MX16171D100/MX16171S100 can connect to power supplies from 1V to 100V (a separate VS supply is required when the input voltage is between 1V and 4V) and can withstand transient voltages up to 110V.
At initial power-up, load current flows through the MOSFET body diode from source to drain. Once the voltage across the body diode exceeds VSD(REG), the MX16171D100/MX16171S100 begins charging the MOSFET gate via a 30μA (typical) charge pump current source. During forward operation, the MOSFET gate is charged until it reaches the clamp voltage of the internal 14V gate-to-input-pin zener diode within the MX16171D100/MX16171S100.
The MX16171D100/MX16171S100 is designed to regulate the MOSFET gate-to-source voltage. If MOSFET current decreases such that the voltage across the MOSFET falls below the VSD(REG) voltage regulation point of 30mV (typical), the gate pin voltage will decrease until the voltage across the MOSFET is regulated to 20mV. If the source-to-drain voltage exceeds the VSD(REG) voltage, the gate-to-source voltage will increase, ultimately reaching the 14V gate-to-input-pin zener clamp level.
If MOSFET current reverses — possibly due to an input supply failure — causing the voltage across the MX16171D100/MX16171S100 input and output pins to become more negative than the VSD(REV) voltage of -15mV (typical), the MX16171D100/MX16171S100 will rapidly discharge the MOSFET gate through a strong gate-to-input-pin discharge transistor. If the input supply fails suddenly — for example, a supply shorted directly to ground — reverse current will temporarily flow through the MOSFET until the gate is fully discharged. This reverse current originates from the load capacitance and parallel-connected power supplies. The MX16171D100/MX16171S100 typically responds to a voltage reversal condition within 50ns. The actual time required to turn off the MOSFET depends on the charge held by the gate capacitance of the MOSFET used. A MOSFET with an effective gate capacitance of 47nF can typically be turned off within 260ns. This fast turn-off time minimizes voltage disturbances at the output and current transients from redundant power supplies.
The VS pin of the MX16171D100/MX16171S100 is the main supply pin for all internal biasing and serves as the auxiliary supply for the internal gate drive charge pump.
For a typical MX16171D100/MX16171S100 application, the VS pin can be connected directly to the output pin. The capacitance value should be the minimum required to achieve acceptable filtering of voltage noise.
If the VS pin is powered while the input pin is floating or grounded, approximately 0.5mA of current will leak from the VS pin into the IC, and approximately 2mA of current will leak from the output pin into the IC.
The OFF pin is a logic-level input pin that controls gate drive to the external MOSFET. The maximum operating voltage on this pin is 5.5V.
When the OFF pin is driven high, the MOSFET turns off regardless of the detected input and output voltages. In this mode, load current flows through the MOSFET body diode. If the MOSFET operates normally through the body diode, the voltage difference between the input and output pins is approximately 700mV.
The OFF pin has an internal 5μA (typical) pull-down current. If the OFF function is not required, this pin may be left floating or connected to ground.
Features
- Wide input voltage range VIN: 5V to 100V
- 110V transient voltage
- Charge pump gate driver for external N-channel MOSFET
- 50ns fast response to current reversal
- 2A peak gate turn-off current
- Ultra-low VDS turn-off voltage reduces turn-off time
- DFN2×3-8L and SOP8 packages
Applications
Active OR-Gate for Redundant (N+1) Power Supplies
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| Type | Details |
|---|---|
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |