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JSMSEMI MBRD835LT4G-JSM product image
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JSMSEMI MBRD835LT4G-JSMRoHS

Manufacturer
JSMSEMIAsian Brands
MPN
MBRD835LT4G-JSM
LCSC Part #
C18195213
Packaging
TO-252
Customer #
Key Attributes
DIODE SCHOTTKY 35V TO-252
Datasheetpdf iconJSMSEMI MBRD835LT4G-JSM
In-Stock: 1,080
1,080 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1598$ 0.1359$ 0.68
50+$ 0.1561$ 0.1327$ 6.64
150+$ 0.1536$ 0.1306$ 19.59
500+$ 0.1511$ 0.1285$ 64.25
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Diodes/Rectifiers/Single Diodes
ManufacturerJSMSEMI
PackagingTO-252
Diode Configuration1 Independent
Operating Junction Temperature Range-65℃~+125℃
Voltage - DC Reverse (Vr) (Max)35V
Voltage - Forward(Vf@If)510mV@8A
Reverse Leakage Current (Ir)1.4mA@35V
Non-Repetitive Peak Forward Surge Current175A
Current - Rectified8A
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Features

AI Translation
  • Schottky barrier chip
  • Low power consumption, high efficiency
  • Guard ring for transient protection
  • High operating junction temperature
  • Minimal lot-to-lot variation for consistent device performance and reliable operation
  • DPAK
  • TO-252 package
  • Pin: 1 Anode
  • 3 Anode
  • 4 Cathode

Applications

AI Translation
  • High-frequency rectifier for switch-mode power supplies
  • Freewheeling diode
  • DC-DC converter
  • Polarity protection applications