JSMSEMI IR2128STRPBF-JSM
| Manufacturer | JSMSEMIAsian Brands |
| MPN | IR2128STRPBF-JSM |
| LCSC Part # | C18194994 |
| Packaging | SOIC-8 |
| Customer # | |
| Key Attributes | 300V single-channel high-side gate driver chip with overcurrent detection |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers | |
| Manufacturer | JSMSEMI | |
| Packaging | SOIC-8 | |
| Input Logic Level - Low | - | |
| Low Level Delay Time | - | |
| High Level Delay Time | - | |
| Quiescent Current | 60uA | |
| Input Logic Level - High | - | |
| Operating Temperature | -40℃~+125℃ | |
| Voltage - Supply | 10V~20V | |
| Driven Configuration | Low Side;High Side | |
| Current - Output Low(IOL) | 600mA | |
| Rise Time | 80ns | |
| Fall Time | 40ns | |
| Features | Under Voltage Protection;Overcurrent Protection;Over Current Protection;Built-in bootstrap diode | |
| Current - Output High(IOH) | 300mA | |
| Load Type | MOSFET;IGBT |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
This product is a family of high-voltage, high-speed single-channel high-side MOSFET/IGBT gate driver ICs with overcurrent detection. A high-voltage/low-voltage compatible process enables monolithic integration of the high-side gate drive circuit, with logic input levels compatible with CMOS or LSTTL logic outputs as low as 3.3V. A built-in high-side overcurrent protection circuit shuts down the output when an overcurrent condition is detected, while an open-drain FAULT pin asserts a fault signal. The floating channel supports driving of high-side N-channel power MOSFETs, with a maximum floating supply voltage of 300V. Available in SOIC8 package, operating over a temperature range of -40℃ to 125℃.
Features
- Integrated bootstrap diode
- Maximum operating voltage up to +300V
- Compatible with 3.3V, 5V, and 15V input logic
- dVs/dt immunity up to ±50 V/ns
- Vs negative bias capability down to -5V
- Input/output in-phase
- Gate drive voltage range: 12V to 20V
- Integrated UVLO circuit, UVLO threshold 9V/10.3V
- Propagation delay characteristics: Ton/Toff = 150ns/150ns
- Wide temperature range: -40℃ ~ 125℃
- Fault pin fault output
- RoHS compliant
Applications
- Motor control and drive
- Robotics
- Electric vehicles
- Fast charging
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.0044 | $ 1.00 |
| 10+ | $ 0.8306 | $ 8.31 |
| 30+ | $ 0.7356 | $ 22.07 |
| 100+ | $ 0.6278 | $ 62.78 |
| 500+ | $ 0.5795 | $ 289.75 |
| 1,000+ | $ 0.5586 | $ 558.60 |
Standard Packaging2500/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers | |
| Manufacturer | JSMSEMI | |
| Packaging | SOIC-8 | |
| Input Logic Level - Low | - | |
| Low Level Delay Time | - | |
| High Level Delay Time | - | |
| Quiescent Current | 60uA | |
| Input Logic Level - High | - | |
| Operating Temperature | -40℃~+125℃ | |
| Voltage - Supply | 10V~20V | |
| Driven Configuration | Low Side;High Side | |
| Current - Output Low(IOL) | 600mA | |
| Rise Time | 80ns | |
| Fall Time | 40ns | |
| Features | Under Voltage Protection;Overcurrent Protection;Over Current Protection;Built-in bootstrap diode | |
| Current - Output High(IOH) | 300mA | |
| Load Type | MOSFET;IGBT |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
This product is a family of high-voltage, high-speed single-channel high-side MOSFET/IGBT gate driver ICs with overcurrent detection. A high-voltage/low-voltage compatible process enables monolithic integration of the high-side gate drive circuit, with logic input levels compatible with CMOS or LSTTL logic outputs as low as 3.3V. A built-in high-side overcurrent protection circuit shuts down the output when an overcurrent condition is detected, while an open-drain FAULT pin asserts a fault signal. The floating channel supports driving of high-side N-channel power MOSFETs, with a maximum floating supply voltage of 300V. Available in SOIC8 package, operating over a temperature range of -40℃ to 125℃.
Features
- Integrated bootstrap diode
- Maximum operating voltage up to +300V
- Compatible with 3.3V, 5V, and 15V input logic
- dVs/dt immunity up to ±50 V/ns
- Vs negative bias capability down to -5V
- Input/output in-phase
- Gate drive voltage range: 12V to 20V
- Integrated UVLO circuit, UVLO threshold 9V/10.3V
- Propagation delay characteristics: Ton/Toff = 150ns/150ns
- Wide temperature range: -40℃ ~ 125℃
- Fault pin fault output
- RoHS compliant
Applications
- Motor control and drive
- Robotics
- Electric vehicles
- Fast charging
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| Type | Details |
|---|---|
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |



