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JSMSEMI FDN8601-JSM product image
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JSMSEMI FDN8601-JSMRoHS

Manufacturer
JSMSEMIAsian Brands
MPN
FDN8601-JSM
LCSC Part #
C18194233
Packaging
SOT-23-3L
Customer #
Key Attributes
MOSFET N-CH 100V 3A SOT-23-3L
Datasheetpdf iconJSMSEMI FDN8601-JSM
In-Stock: 2,675
2,675 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1009$ 0.50
50+$ 0.087$ 4.35
150+$ 0.081$ 12.15
500+$ 0.0736$ 36.80
3,000+$ 0.0723$ 216.90
6,000+$ 0.0703$ 421.80
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerJSMSEMI
PackagingSOT-23-3L
Drain to Source Voltage100V
Current - Continuous Drain(Id)3A
Output Capacitance(Coss)40pF
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.25W
Reverse Transfer Capacitance (Crss@Vds)15pF
Number1 N-channel
Input Capacitance(Ciss)295pF
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The FDN8601-JSM is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density advanced trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package.

Features

AI Translation
  • 100V/ 3.0 A, RDs(ON)=220mΩ(typ.)@VGS=4.5V
  • 100V/ 2.5 A, RDs(ON)=280mΩ (typ.) @VGS = 2.5V
  • Super high design for extremely low RDs(ON)
  • Exceptional on-resistance and Maximum DC current capability
  • This is a Ful RoHS compliance
  • SOT23-3L package design

Applications

AI Translation
  • Power Management in Note Book
  • Portable Equipment
  • Battery Powered System