NCE NCE65T540F
| Manufacturer | NCEAsian Brands |
| MPN | NCE65T540F |
| LCSC Part # | C181926 |
| Packaging | TO-220F |
| Customer # | |
| Key Attributes | MOSFET N-CH 650V 8A TO-220F |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | NCE | |
| Packaging | TO-220F | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 8A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 31.6W | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.9pF | |
| RDS(on) | 460mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 590pF | |
| Gate Charge(Qg) | 14.6nC@10V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Features
AI Translation
- New technology for high voltage device
- Low on-resistance and low conduction losses
- Small package
- Ultra Low Gate Charge cause lower driving requirements
- 100% Avalanche Tested
- ROHS compliant
Applications
AI Translation
- Power factor correction(PFC)
- Switched mode power supplies(SMPS)
- Uninterruptible Power Supply(UPS)
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.738 | $ 0.74 |
| 10+ | $ 0.5834 | $ 5.83 |
| 50+ | $ 0.5053 | $ 25.27 |
| 100+ | $ 0.4288 | $ 42.88 |
| 500+ | $ 0.3826 | $ 191.30 |
| 1,000+ | $ 0.3587 | $ 358.70 |
Standard Packaging50/Full Tube | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | NCE | |
| Packaging | TO-220F | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 8A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 31.6W | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.9pF | |
| RDS(on) | 460mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 590pF | |
| Gate Charge(Qg) | 14.6nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Features
AI Translation
- New technology for high voltage device
- Low on-resistance and low conduction losses
- Small package
- Ultra Low Gate Charge cause lower driving requirements
- 100% Avalanche Tested
- ROHS compliant
Applications
AI Translation
- Power factor correction(PFC)
- Switched mode power supplies(SMPS)
- Uninterruptible Power Supply(UPS)
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
